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Substrate Effects on the Kinetics of Solid Phase Crystallization In a-Si

  • L. Haji (a1), P. Joubert (a1), M. Guendouz (a2), N. Duhamel (a2) and B. Loisel (a2)...

Abstract

The effect of substrate nature on the solid phase crystallization at 600 °C of a-Si deposited by low pressure chemical vapor deposition is investigated by x-ray diffraction and transmission electron microscopy. The nucleation rate varies slightly resulting to a weak variation in the final grain sizes as a function of the substrate type. In all cases the grain growth mode is found to be three dimensional. In contrary, a drastic effect of the substrate is observed for films deposited by plasma enhanced CVD. Fast crystallization is obtained on indium tin oxide (ITO) resulting to small grain poly-Si, whereas the crystallization is retarded on glass leading to an increase in the grain size.

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Substrate Effects on the Kinetics of Solid Phase Crystallization In a-Si

  • L. Haji (a1), P. Joubert (a1), M. Guendouz (a2), N. Duhamel (a2) and B. Loisel (a2)...

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