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Substrate Dependent Texture and Heteroepitaxy for Group IIIA Nitride Films by the X-Ray Precession Method

Published online by Cambridge University Press:  21 February 2011

T. J. Kistenmacher
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20723-6099
W. A. Bryden
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20723-6099
D. K. Wickenden
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20723-6099
S. A. Ecelberger
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20723-6099
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Abstract

The X-ray precession method has been utilized to study texture and heteroepitaxy for thin films of the Group IIIA nitrides deposited on a variety of amorphous and single-crystal substrates. Films of InN were synthesized by reactive rfmagnetron sputtering [employing an elemental target and N2 as the sputtering gas], while the GaN films were deposited by metalorganic chemical vapor deposition [utilizing (CH 3 ) 3Ga and NH3 as sources]. The quality of (00.1) textured films of InN on fused quartz and slightly off-axis (111) Si are taken as initial examples of the versatility of the X-ray precession method. The powder rings evolving from a lack of azimuthal coherence for InN films grown on quartz are contrasted with the scattering from weakly correlated (pseudo heteroepitaxial) domains for films grown on (111) Si. These latter scattering features are then compared with those from the true heteroepitaxial deposition of InN onto the (111) face of cubic ZrO2. And, finally, the scattering from the heteroepitaxial growth of InN and GaN on the (00.1) face of sapphire and some initial studies on the effect of nucleation layers on twinning in the GaN films are presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Buerger, M. J., The Precession Method in X-Ray Crystallography (Wiley, New York, 1964).Google Scholar
2. See, for example, Cho, A. Y. and Dernier, P. D., J. Appl. Phys. 49, 3328 (1978); M. Bettini and G. Brandt, J. Appl. Phys. 50, 6938 (1979); M. Mizuta, S. Fujieda, Y.Matsumoto, and T. Kawamura, Jpn. J. Appl. Phys. 25, L945 (1986); R. D. Horning, and J.-L. Staudenmann, J. Cryst. Growth 80, 125 (1987); T. J. Kistenmacher, W. A. Bryden, J. S. Morgan, and T. O. Poehler, J. Appl. Phys. 68, 1541 (1990).Google Scholar
3. In the calculated scattering diagrams, diffraction from both MoKα and MoKβ radiation are shown for the single-crystal substrates; however, just the MoKα vectors are depicted for the weaker scattering from the Group IIIA nitride thin films.Google Scholar
4. Nuffield, E. W., X-Ray Diffraction Methods (Wiley, New York, 1966).Google Scholar
5. In order to record the transmission pattern in this case, the zirconia substrate was mechanically dimpled to a thickness of about 75 μm.Google Scholar
6. Kistenmacher, T. J., Bryden, W. A., Morgan, J. S., Dayan, D., Fainchtein, R., and T. 0. Poehler, J. Mater. Res., submitted.Google Scholar