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Substrate Dependence of Electrical Properties of Contacts on p-InP

  • Moon-Ho Park (a1), C.L. Yeh (a1), L.C. Wang (a1), F. Deng (a2), Q. Z. Liu (a2), A.R. Clawson (a2) and S. S. Lau (a2)...

Abstract

Pd and Ni contacts on various p-InP substrates which were grown by liquid-encapsulation Czochralski (LEC) and metal organic chemical vapor deposition (MOCVD) were investigated. Pd contacts on the substrates supplied by one manufacturer were found to be ohmic contacts with a minimum contact resistivity of ∼ 5xl0-5Ω-cm2 for annealing temperature between 420°C and 500°C. However, ohmic behavior was not observed for Pd contacts on other substrates. Hall measurement and double-crystal x-ray diffractometer were used to evaluate the substrates. It was speculated that existence of intrinsic defects in p-InP grown by LEC method may be responsible for the observed ohmic behavior. This defect-assisted tunneling mechanism is potentially usefully for making ohmic contacts on other compound semiconductors.

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Substrate Dependence of Electrical Properties of Contacts on p-InP

  • Moon-Ho Park (a1), C.L. Yeh (a1), L.C. Wang (a1), F. Deng (a2), Q. Z. Liu (a2), A.R. Clawson (a2) and S. S. Lau (a2)...

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