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Substantial Reduction of Reset Current in CoO RRAM with Ta Bottom Electrode

  • Hisashi Shima (a1), Fumiyoshi Takano (a2), Yukio Tamai (a3), Hidenobu Muramatsu (a4), Hiroyuki Akinaga (a5), Isao H Inoue (a6) and Hidenori Takagi (a7)...

Abstract

The resistance switching in Pt/Co-O/Pt and Ta/Co-O/Pt has been investigated. Compared to Pt/Co-O/Pt, the reset current was more efficiently decreased in Ta/Co-O/Pt by using the load resistor in the forming process, indicating that the embedded resistance component with little parasitic capacitance effectively limits the current in the forming process. The reset process with the reset current lower than 0.15 mA was successfully demonstrated in Ta/Co-O/Pt. In addition, the high speed resistance switching by the voltage pulse with the pulse width of 20 ns was carried out, by investigating the pulse voltage height dependence of reset speed in Ta/Co-O/Pt.

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Substantial Reduction of Reset Current in CoO RRAM with Ta Bottom Electrode

  • Hisashi Shima (a1), Fumiyoshi Takano (a2), Yukio Tamai (a3), Hidenobu Muramatsu (a4), Hiroyuki Akinaga (a5), Isao H Inoue (a6) and Hidenori Takagi (a7)...

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