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Sublimation Sandwich Growth of Free Standing GaN Crystals

  • Yu. A. Vodakov (a1), E. N. Mokhov (a1), M. G. Ramm (a1), M. S. Ramm (a1), A. D. Roenkov (a1), A. G. Ostroumov (a1), A. A. Wolfson (a1), S. Yu. Karpov (a2), Yu. N. Makarov (a3) and H. Jürgensen (a4)...

Abstract

Thick epitaxial layers of GaN on SiC and sapphire are grown by using the sublimation sandwich method. It is shown that growth of good quality GaN crystals with the growth rates up to 0.5 mm/hour is possible using this technique. The grown layers have been separated from the seed and free standing GaN crystals up to 15 mm size were obtained.

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Sublimation Sandwich Growth of Free Standing GaN Crystals

  • Yu. A. Vodakov (a1), E. N. Mokhov (a1), M. G. Ramm (a1), M. S. Ramm (a1), A. D. Roenkov (a1), A. G. Ostroumov (a1), A. A. Wolfson (a1), S. Yu. Karpov (a2), Yu. N. Makarov (a3) and H. Jürgensen (a4)...

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