Skip to main content Accessibility help
×
Home

Study the Conduction Mechanism and the Electrical Response of Strained Nano-thin 3C-SiC Films on Si used as Surface Sensors

  • Ronak Rahimi (a1), Christopher M Miller (a2), Alan Munger (a3), Srikanth Raghavan (a1), C D Stinespring (a1) and D Korakakis (a1)...

Abstract

Various superior properties of SiC such as high thermal conductivity, chemical and thermal stability and mechanical robustness provide the basis for electronic and MEMS devices of novel design [1]. This work evaluates heterostructures that consist of a few nanometers-thick 3C-SiC films on silicon substrates. Nano-thin SiC films differ significantly in their electrical behavior compared to the bulk material [2], a finding that gives rise to a potential use of these films as surface sensors. To gain a better understanding of the effect of surface states on the electrical response of these thin, strained films, several metal-semiconductor-metal heterostructures have been examined under variable conditions. The nano-thin, strained films were grown using gas source molecular beam epitaxy. Reflection high-energy electron diffraction patterns obtained from several 3C-SiC films indicate that these films are strained nearly 3% relative to the SiC lattice constant. Al, Cr and Pt contacts to a nano-thin film 3C-SiC were deposited and characterized. I-V measurements of the strained nano-thin films demonstrate metal-semiconductor-metal characteristics. Band offsets due to biaxial tensile strain introduced within the 3C-SiC films were calculated and band diagrams incorporating strain effects were simulated. Electron affinity of 3C-SiC has been extracted from experimental I-V curves and is in good agreement with the value that has been calculated for a strained 3C-SiC film [3]. On the basis of experimental and simulation results, an empirical model for the current transport has been proposed. Fabricated devices have been characterized in a controlled environment under hydrogen flow and also in a reactive ambient, while heating the sample and oxidizing the surface, to investigate the effects of the environment on the surface states. Observed changes in I-V characteristics suggest that these nano-thin films can be used as surface sensors.

Copyright

References

Hide All
1. Azevedo, R.G., Jones, D.G., Jog, A.V., Jamshidi, B., Myers, D.R., Chen, L., Fu, X., Mehregany, M., Wijesundara, M.B., Pisano, A.P., IEEE Sens. J. 7, 801803 (2007).
2. Hsieh, W.T., Fang, Y.K., Wu, K.H., Lee, W.J., Ho, J.J. and Ho, C.W., IEEE Trans. Electron Devices 48, 8012803 (2001)
3. Choyke, W.J., Feng, Z.C. and Powell, J.A., Jour. of Appl. Phys 64, 3163 (1988).
4. Matthews, J.W. and Blakeslee, A.E., Jour. of Crys. Growth 27, 118 (1974).
5. Ohler, C., Daniels, C., Forster, A. and Luth, H., Phy. Rev.B 58, 7864 (1998).
6. Feng, Z.C., Mascarenhas, A., Choyke, W.J. and Powell, J.A., J. Appli. Phys. 64, 3176 (1988).
7. Mukaida, H., Okumura, H., Lee, J.H., Daimon, H., Sakuma, E., Endo, K. and Yoshida, S., J. Appl. Phys. 62, 254 (1987).
8. Ziemer, K. S., Woodworth, A.A., Peng, C.Y. and Stinespring, C.D., Diamond and Related Mat. 16, 486 (2007).
9. Rahimi, R., Raghavan, S., Shelton, N.P., Penigalapatil, D., Balling, A., Woodworth, A.A., Denig, T., Stinespring, C.D. and Korakakis, D., Mater. Res. Soc. Symp. Proc. 1056, (2008).
10. Davis, R.F., Kelner, G., Shur, M., Palmour, J.W., Edmond, J.A., Proc. of the IEEE 79, 677701 (1991).
11. Zhang, Z.Y., Jin, C.H., Liang, X.L., Chen, Q. and Peng, L.M., Appl. Phys. Lett. 88, 73102 (2006).
12. Sze, S.M, “Metal-Semiconductor Contacts” Physics of Semiconductor Devices New York: John Wiley & Sons, (1981).
13. Kuo, C.P., Vong, S.K., Cohen, R.M. and Stringfellow, G.B., J. Appli. Phys. 57, 5428 (1985).
14. Foresi, J.S. and Moustakas, T.D., Applied Physics Letters 62, 2859–61 (1993).

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed