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A Study on the Residual Stress of Diamond-Like Carbon Films Deposited by Magnetically Enhanced RF PECVD

Published online by Cambridge University Press:  10 February 2011

Woon Choi ,
Dong-Hoon Shin ,
Seoung-Eui Nam  and
Hyoung-June Kim
Woon Choi
Affiliation:
Department of Metallurgy & Materials Science. Hong-Ik University, Seoul, Korea
Dong-Hoon Shin
Affiliation:
Department of Metallurgy & Materials Science. Hong-Ik University, Seoul, Korea
Seoung-Eui Nam
Affiliation:
Department of Metallurgy & Materials Science. Hong-Ik University, Seoul, Korea
Hyoung-June Kim
Affiliation:
Department of Metallurgy & Materials Science. Hong-Ik University, Seoul, Korea
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Abstract

Hydrogenated DLC films were synthesized by RF plasma deposition with and without magnetic enhancement, and their film stresses were investigated as a function of process parameters. Under investigated process conditions, Vb/P1/2 (where Vb is the self-bias voltage and P is the working pressure) is the appropriate scaling factor representing impinging ion energy. Film stress is influenced by not only ion impinging energy but also by ion to adspecies flux ratios. As ion energy increases, film stresses increase to a maximum value corresponding to the highest number of sp3 carbon bonds. As ion/adspecies flux ratio increases, the maximum stress value decreases and the corresponding ion energy increases. Induction of a magnetic field promotes film stresses as high as 15.2 GPa, which is one of the highest value reported in hydrogenated DLC films. The magnetic-induced increase of stress can be explained by increased ion/adspecies flux ratio, thus, enhanced sp3 formation. Rapid reduction of stresses observed at high ion energies may stem from the formation of graphite (sp2 bond) phases. Inclusion of hydrogen in the films is not directly responsible for the stress generation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 671
Copyright
Copyright © Materials Research Society 1997

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References

1. Zou, J.W., Schmidt, K., Reichet, K., and Dischler, B., J. Appl. Phys. 67, 487 (1990)Google Scholar
2. Anderson, L.P., Thin Solid Films 86, 193 (1981)Google Scholar
3. Wanger, J., and Lautenchlager, P., J. Appl. Phys. 59, 2044 (1986)Google Scholar
4. Enke, K., Thin Solid Films 80, 227 (1981)Google Scholar
5. Natarajan, V., Lamb, J.D., Woollman, J.A., Liu, D.C., and Gulina, D.A., J. Vac. Sci. Technol. A 3, 681 (1985)Google Scholar
6. Ojaha, S.M., Norstrom, H., and McCulluch, D., Thin Solid Films 60, 213 (1979)Google Scholar
7. Mori, T., and Namba, Y., J. Vac. Sci. Technol. A 1, 23 (1983)Google Scholar
8. Hass, Z., Mitura, S., Clapa, M., and Szmidt, J., Thin Solid Films 136, 161 (1986)Google Scholar
9. Rossi, F., and Andre, B., Jpn. J. Appl. Phys. 31, 872 (1992)Google Scholar
10. Tu, K.-N., Mayer, J.W., and Feldman, L.C., Electronic Thin Film Science, Edited by Johnstone, D., (Macmillan, New Tork, 1992)Google Scholar
11. Catherine, Y., and Couderc, P., Thin Solid Films 144, 256 (1986)Google Scholar
12. Gille, G., and Rau, B., Thin Solid Films 112, 41 (1984)Google Scholar
13. Beeman, D., Silverman, J., Lynds, R., and Anderson, M.R., Phys. Rev. B 30, 870 (1984)Google Scholar
14. Vandentop, G.J., Kawasaki, M., Kobayashi, K., and Somorjai, G.A., J. Vac. Sci. Technol. A 9, 1157 (1991)Google Scholar