Skip to main content Accessibility help

Study on the Effect of RTA Ambient to Shallow N+/P Junction Formation using PH3 Plasma Doping

  • Seung-woo Do (a1), Byung-Ho Song (a2), Ho Jung (a3), Seong-Ho Kong (a4), Jae-Geun Oh (a5), Jin-Ku Lee (a6), Min-Ae Ju (a7), Seung-Joon Jeon (a8), Ja-Chun Ku (a9) and Yong-Hyun Lee (a10)...


Plasma doping (PLAD) process utilizing PH3 plasma to fabricate n-type junction with supplied bias of −1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n+ junctions are formed with surface doping concentration of 1021atoms/cm3. The junction depth increases in proportion to the O2 gas flow when the N2 flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n+ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/□ are feasible.



Hide All
1. International Technology Roadmap for Semiconductors, Front End Processes, 23, (2005).
2. Tsai, M. Y. and Streetman, B. G., J. Appl. Phys., 50, p188, (1979).
3. Jin, H., Oh, S. K., Kang, H. J., Lee, S. W., Lee, Y. S. and Lim, K. Y., J. Korean Phys. Soc. 46, S52, (2005)
4. Chu, Paul K, Plasma Phys. Control Fusion, 45, (2005)
5. Lallement, F. et al., Symp. VLSI Tech. Dig., 178, (2004)
6. Anders, A., Handbook of Plasma Immersion Ion Implantation and Deposition, (2000)



Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed