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Study of ZnTe:Cu Back Contacts on CdTe/CdS Thin Film Solar Cells

Published online by Cambridge University Press:  10 February 2011

J. Tang ,
L. Feng ,
D. Mao ,
W. Song ,
Y. Zhu  and
J. U. Trefny
J. Tang
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401
L. Feng
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401
D. Mao
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401
W. Song
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401
Y. Zhu
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401
J. U. Trefny
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401
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Abstract

Vacuum-evaporated Cu-doped ZnTe films have been studied as the intermediate layer between CdTe and metal contacts in CdTe/CdS thin-film solar cells for the formation of low resistance back contacts. Different metals (Au, Ni, Co) have been investigated as the contact material to the ZnTe layer. The effects of Cu concentration, ZnTe:Cu layer thickness, and ZnTe post-deposition annealing temperature on the cell performances have been investigated. We found that different metal contacts on the ZnTe layer lead to different doping densities in the CdTe layer and different open-circuit photovoltages of the solar cells. The possible formation of a back contact diode at the CdTe/ZnTe interface was explored, based on capacitance-voltage analysis. The series resistance of the CdTe/CdS cells was reduced significantly by the introduction of the ZnTe layer. Fill factors greater than 0.76 and an energy conversion efficiency of 12.9% have been achieved using ZnTe back contacts on electrodeposited CdTe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 355
Copyright
Copyright © Materials Research Society 1996

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