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Study of the Tnfluence of Structural Properties on Si and Be Doping of Heteroepitaxial InAsSb on GaAs-Coated Si Substrates for Infrared Photodiodes

  • J. De Boeck (a1), W. Dobbelaere (a1), M. Van Hove (a1), J. Vanhellemont, W. De Raedt (a1), W. Vandervorst (a1), R. Mertens (a1) and G. Borghs (a1)...

Abstract

The behavior of Si and Be impurities in InAsx Sb1−x (0.05<x<0.45) heteroepitaxial layers grown on GaAs-coated Si by MBE is characterised. Siis found to act as an n-type dopant for the growth conditions used. The calibration of the Si n-type doping as a function of the Sisource temperature is obtained by infrared absorption spectrometry, stripping Hall and SIMS depth profiling. At high doping levels the amphoterical characterof the Si impurities becomes evident. SIMS is used to investigate the dopant incorporation and the formation of diode structures. The influence of the mismatched epitaxy on the transport properties is investigated by stripping Hall measurements. In order to establish the correlation between crystalline properties of the epilayers and the ability to fabricate diodes, we compare the defect structure of InAs and In(As)Sb p-'i'-n diodes.

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1.see eg. Lee, G. S., Lo, Y., Lin, Y.F., Bedair, S.M., and Laidig, W.D., Appl. Phys. Lett. 47(11), 12191221 (1985); J.-I. Chyi, S. Kalem, N.S. Kumar, C.W. Litton, and H. Morkoq, Appl. Phys. Lett. 53(12), 1092-1094 (1988); M.Y. Yen, J. Appl. Phys. 64(6), 3306-3309 (1988)
2. Boeck, J. De, Liang, J.B., Deneffe, K., Vanhellemont, J., Arent, D.J., Hoof, C. Van, Mertens, R., and Borghs, G., Appl. Phys. Lett. 53(12), 10711073 (1988)
3. Dobbelaere, W., Boeck, J. De, Hove, M. Van, Deneffe, K., Raedt, W. De, Mertens, R., and Borghs, G., IEDM Techn. Dig. 717–720 (1989), Electron. Lett. 26(4) 259-261 (1990)
4. Kurtz, S.R., Dawson, L.R., Zipperian, T.E., and Lee, S.R., Appl. Phys. Lett. 520(9) 15811583 (1988)
5. Parker, S.D., Williams, R.L., Droopad, R., Stradling, R.A., Barnham, K.W.J., Holmes, S.N., Laverty, J., Philips, C.C., Skuras, E., Thomas, R., Zhang, X., Staton-Bevan, A. and Pashley, D.W., S.S. Technol. 4, 663676 (1989)
6. Dobbelaere, W., Boeck, J. De, Borghs, G., Appl. Phys. Lett. 55, 18561858 (1989)
7. Rogalski, A., Prog. Quant. Electr, 13, 191231 (1989)
8. Varrio, J., Asonen, H., Lammasniemi, J., Rakennus, K., and Pessa, M., Appl. Phys. Lett. 550(19), 19871989 (1989)
9. Kane, E.O., J. Phys. Chem. Solids. 1, 249261 (1957)
10. Zawadski, W., Szymanska, W., J. Phys. Chem. Solids, 32, 11511174 (1971)
11. Petriz, R., Phys. Rev. 110(6), 12541262 (1958); and H.A. Washburn, J.R. Sites, H.H. Wieder, J. Appl. Phys. 50(7), 4872-4878 (1979); and R.A.A. Kubiak, E.H.C. Parker, S. Newstead, J.J. Harris, Appl. Phys. A. 35, 61-66 (1984)
12.see eg. Osbourn, G.C., Dawson, L.R., Biefeld, R.M., Zipperian, T.E., Fritz, I.J., and Doyle, B.L., J. Vac. Sci Technol. A 5(5) 31503152 (1987)

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Study of the Tnfluence of Structural Properties on Si and Be Doping of Heteroepitaxial InAsSb on GaAs-Coated Si Substrates for Infrared Photodiodes

  • J. De Boeck (a1), W. Dobbelaere (a1), M. Van Hove (a1), J. Vanhellemont, W. De Raedt (a1), W. Vandervorst (a1), R. Mertens (a1) and G. Borghs (a1)...

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