Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-24T08:11:32.706Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of the Tnfluence of Structural Properties on Si and Be Doping of Heteroepitaxial InAsSb on GaAs-Coated Si Substrates for Infrared Photodiodes

Published online by Cambridge University Press:  28 February 2011

J. De Boeck ,
W. Dobbelaere ,
M. Van Hove ,
J. Vanhellemont ,
W. De Raedt ,
W. Vandervorst ,
R. Mertens  and
G. Borghs
J. De Boeck
Affiliation:
Interuniversity Micro Electronics Center (IMEC vzw.), 75 Kapeldreef, B-3030 Leuven;, Belgium
W. Dobbelaere
Affiliation:
Interuniversity Micro Electronics Center (IMEC vzw.), 75 Kapeldreef, B-3030 Leuven;, Belgium
M. Van Hove
Affiliation:
Interuniversity Micro Electronics Center (IMEC vzw.), 75 Kapeldreef, B-3030 Leuven;, Belgium
W. De Raedt
Affiliation:
Interuniversity Micro Electronics Center (IMEC vzw.), 75 Kapeldreef, B-3030 Leuven;, Belgium
W. Vandervorst
Affiliation:
Interuniversity Micro Electronics Center (IMEC vzw.), 75 Kapeldreef, B-3030 Leuven;, Belgium
R. Mertens
Affiliation:
Interuniversity Micro Electronics Center (IMEC vzw.), 75 Kapeldreef, B-3030 Leuven;, Belgium
G. Borghs
Affiliation:
Interuniversity Micro Electronics Center (IMEC vzw.), 75 Kapeldreef, B-3030 Leuven;, Belgium
Get access

Abstract

The behavior of Si and Be impurities in InAsx Sb1−x (0.05<x<0.45) heteroepitaxial layers grown on GaAs-coated Si by MBE is characterised. Siis found to act as an n-type dopant for the growth conditions used. The calibration of the Si n-type doping as a function of the Sisource temperature is obtained by infrared absorption spectrometry, stripping Hall and SIMS depth profiling. At high doping levels the amphoterical characterof the Si impurities becomes evident. SIMS is used to investigate the dopant incorporation and the formation of diode structures. The influence of the mismatched epitaxy on the transport properties is investigated by stripping Hall measurements. In order to establish the correlation between crystalline properties of the epilayers and the ability to fabricate diodes, we compare the defect structure of InAs and In(As)Sb p-'i'-n diodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 147
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.see eg. Lee, G. S., Lo, Y., Lin, Y.F., Bedair, S.M., and Laidig, W.D., Appl. Phys. Lett. 47(11), 1219–1221 (1985); J.-I. Chyi, S. Kalem, N.S. Kumar, C.W. Litton, and H. Morkoq, Appl. Phys. Lett. 53(12), 1092-1094 (1988); M.Y. Yen, J. Appl. Phys. 64(6), 3306-3309 (1988)Google Scholar
2. Boeck, J. De, Liang, J.B., Deneffe, K., Vanhellemont, J., Arent, D.J., Hoof, C. Van, Mertens, R., and Borghs, G., Appl. Phys. Lett. 53(12), 1071–1073 (1988)Google Scholar
3. Dobbelaere, W., Boeck, J. De, Hove, M. Van, Deneffe, K., Raedt, W. De, Mertens, R., and Borghs, G., IEDM Techn. Dig. 717–720 (1989), Electron. Lett. 26(4) 259-261 (1990)Google Scholar
4. Kurtz, S.R., Dawson, L.R., Zipperian, T.E., and Lee, S.R., Appl. Phys. Lett. 520(9) 1581–1583 (1988)Google Scholar
5. Parker, S.D., Williams, R.L., Droopad, R., Stradling, R.A., Barnham, K.W.J., Holmes, S.N., Laverty, J., Philips, C.C., Skuras, E., Thomas, R., Zhang, X., Staton-Bevan, A. and Pashley, D.W., S.S. Technol. 4, 663–676 (1989)Google Scholar
6. Dobbelaere, W., Boeck, J. De, Borghs, G., Appl. Phys. Lett. 55, 1856–1858 (1989)Google Scholar
7. Rogalski, A., Prog. Quant. Electr, 13, 191–231 (1989)Google Scholar
8. Varrio, J., Asonen, H., Lammasniemi, J., Rakennus, K., and Pessa, M., Appl. Phys. Lett. 550(19), 1987–1989 (1989)Google Scholar
9. Kane, E.O., J. Phys. Chem. Solids. 1, 249–261 (1957)Google Scholar
10. Zawadski, W., Szymanska, W., J. Phys. Chem. Solids, 32, 1151–1174 (1971)Google Scholar
11. Petriz, R., Phys. Rev. 110(6), 1254–1262 (1958); and H.A. Washburn, J.R. Sites, H.H. Wieder, J. Appl. Phys. 50(7), 4872-4878 (1979); and R.A.A. Kubiak, E.H.C. Parker, S. Newstead, J.J. Harris, Appl. Phys. A. 35, 61-66 (1984)Google Scholar
12.see eg. Osbourn, G.C., Dawson, L.R., Biefeld, R.M., Zipperian, T.E., Fritz, I.J., and Doyle, B.L., J. Vac. Sci Technol. A 5(5) 3150–3152 (1987)Google Scholar