Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-24T16:11:31.741Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of the Effects of a Two-Step Anneal on the End of Range Defects in Silicon

Published online by Cambridge University Press:  01 February 2011

Renata A. Camillo-Castillo ,
Kevin. S. Jones ,
Mark E. Law  and
Leonard M. Rubin
Renata A. Camillo-Castillo
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
Kevin. S. Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
Mark E. Law
Affiliation:
Department of Electrical Engineering, University of Florida, Gainesville, FL
Leonard M. Rubin
Affiliation:
Axcelis Techologies, Beverly, MA
Get access

Abstract

Transient enhanced diffusion (TED) is a challenge that the semi-conductor industry has been faced with for more than two decades. Numerous investigations have been conducted to better understand the mechanisms that govern this phenomenon, so that scale down can be acheived. {311} type defects and dislocation loops are known interstitial sources that drive TED and dopants such as B utilize these interstitials to diffuse throughout the Si lattice. It has been reported that a two-step anneal on Ge preamorphized Si with ultra-low energy B implants has resulted in shallower junction depths. This study examines whether the pre-anneal step has a measurable effect on the end of range defects. Si wafers were preamorphized with Ge at 10, 12, 15, 20 and 30keV at a dose of 1x1015cm-2 and subsequently implanted with 1x1015cm-2 1keV B. Furnace anneals were performed at 450, 550, 650 and 750°C; the samples were then subjected to a spike RTA at 950°C. The implant damage was analyzed using Quantitative Transmission Electron Microscopy (QTEM). At the low energy Ge preamorphization, little damage is observed. However at the higher energies the microstructure is populated with extended defects. The defects evolve into elongated loops as the preanneal temperature increases. Both the extended defect density and the trapped interstitial concentration peak at a preanneal temperature of 550°C, suggesting that this may be an optimal condition for trapping interstitials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C1.4
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lampin, E., Senez, V., Claverie, A., J Appl. Phys. 1999, 85 (12): 8137 Google Scholar
2. Fahey, P.M., Griffin, P. B., Plummer, J.D., Re. Mod. Phys. 1989, 61: 289 Google Scholar
3. Ozturk, M. C., Wortman, J.J., Osburn, C.M., Ajmera, A., Rozgonyi, G.A., Frey, E., Chu, W., Lee, C., IEEE Transactions on Electron Devices. 1988, 35 (5): 659–667 Google Scholar
4. Ajmera, A.C., Rozgonyi, G.A., Appl. Phys. Lett. 1986, 49(19): 1269–1271 Google Scholar
5. Gutierrez, A. F., Master's Thesis, Materials Science and Engineering, University of Florida. 2001, 16 Google Scholar
6. Drosd, R. and Washburn, J., J. Appl. Phys. 1982, 53(1): 397–403 Google Scholar
7. Eaglesham, D. J., Stolk, P.A., Grossman, H.J., Poate, J.M., Appl. Phy. Lett. 1994, 65 (18):2305 Google Scholar
8. Bonafos, C., Mathiot, D. and Claverie, A., J. Appl. Phys. 1998, 83: 3008 Google Scholar
9. Jones, K.S., Zhang, L.H., Krishnamoorthy, V., Law, M., Simons, D.S., Chi, P., Rubin, L. and Elliman, R.G., Appl. Phy. Lett. 1996, 68: 2672 Google Scholar
10. Libertino, S., Coffa, S., Benton, J.L., Halliburton, K., Eaglesham, D.J., Nuc. Ins. Met. Phys. Res. B, 1999, 148: 247 Google Scholar
11. Coffa, S., Libertino, S., Spinella, C., Appl. Phys. Lett. 2000, 76(3): 321 Google Scholar
12. Benton, J.L., Halliburton, K., Libertino, S., Eaglesham, D.J., J. Appl. Phys. 1998, 84(9): 4749 Google Scholar
13. Zhang, L.H., Jones, K.S., Chi, P.H., Simmons, D.S., Appl. Phy. Lett. 1995, 67: 2025 Google Scholar
14. Benton, J.L., Libertino, S., Eaglesham, D.J., Coffa, S., Mat. Res. Soc. Symp. Proc., 1997, 469: 193 Google Scholar
15. Volmer, M. and Weber, A., J. Phys. Chem. 1926, 119: 227 Google Scholar
16. Thomas, G., Goringe, M.J., Transmission Electron Microscopy of Materials, John Wiley & Sons. 1979 Google Scholar
17. Loretto, M.H., Electron Beam Analysis of Materials, Chapman & Hall, London. 1984 Google Scholar
18. Bharatan, S., Desrouches, J., Jones, K.S., Materials and Process Characterization of Ion Implantation, Ion Beam Press. 1997. Chp.4: 222–243 Google Scholar
19. Jasper, C., Hoover, A., Jones, K.S., Appl. Phy. Lett. 1999, 79(17): 2629 Google Scholar
20. Cowern, N.E.B., Mannino, G., Stolk, P.A., Rooseboom, F., Huizing, H.G.A., van Berkum, J.G.M., Cristiano, F., Claverie, A. and Jariaz, M., Phys. Rev. Lett. 1999, 82: 4460 Google Scholar
21. Claverie, A., Giles, L.F., Omri, M., de, B. Mauduit, Ben, G. Assayag and Mathiot, D., MRS Proceedings 1998, J 1 Google Scholar