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Study of the Effect of Metal/Semiconductor Interface Properties on a Resistance Switching Device

Published online by Cambridge University Press:  01 February 2011

Manuel Villafuerte ,
Silvia P. Heluani ,
Gabriel Juárez ,
David Comedi ,
Gabriel Braunstein  and
Federico Golmar
Manuel Villafuerte
Affiliation:
mvillafuerte@herrra.unt.edu.ar, Universidad Nacional de Tucumán,, Física, Lab. de Física del Sólido, Av. Independencia 1800 Tucumán 4000, Argentina
Silvia P. Heluani
Affiliation:
sperez@herrera.unt.edu.ar, Universidad Nacional de Tucumán, Física, Lab. de Física del Sólido, Av. Independencia 1800, Tucumán, 4000, Argentina
Gabriel Juárez
Affiliation:
Gabriel_Juarez@hotmail.com, Universidad Nacional de Tucumán, Física, Lab. de Física del Sólido, Av. Independencia 1800, Tucumán, 4000, Argentina
David Comedi
Affiliation:
dcomedi@herrera.unt.edu.ar, Universidad Nacional de Tucumán,, Física, Lab. de Física del Sólido, Av. Independencia 1800, Tucumán, 4000, Argentina
Gabriel Braunstein
Affiliation:
gbraunst@mail.ucf.edu, Micron Technology, 9600 Godwin Drive, Manassas, VA, 20110, United States
Federico Golmar
Affiliation:
fgolmar@gmail.com, Universidad de Buenos Aires, Lab. de Ablación Láser, Buenos Aires, 1000, Argentina
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Abstract

N-doped ZnO thin films were deposited by pulsed laser deposition on SiO2/Si substrates. X-ray diffraction analysis revealed that the films had the wurtzite structure, and were highly oriented along the c-axis direction. Au and Al electrical contacts were deposited by sputtering on the top surface of the samples, forming a two-terminal structure in each case. The current-voltage characteristics of the two terminal structure, and the temperature dependence of the resistance switching effect, were studied in the 125-300 K temperature range. The results of these measurements are presented and discussed in terms of the different Schottky barrier heights, as well as in terms of interfacial defect-induced gap states.

Keywords

thin filmmetal-insulator transitionelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I07-06
Copyright
Copyright © Materials Research Society 2007

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References

1. Ovshinsky, S.R., Phys. Rev. Lett. 36, 1469 (1968).Google Scholar
2. Dewald, J.F., Pearson, A.D., Northover, W.R. and Peck, W.F., J. Electr. Soc. 109, 243c (1962).Google Scholar
3. Dearnaley, G., Stoneham, A.M. and Morgan, D.V., Rep. Prog. Phys. 33, 1129 (1970).Google Scholar
4. Hovel, H. J. and Urgell, J. J., J. Appl. Phys. 42, 5076 (1971).Google Scholar
5. Hiatt, W.R. and Hickmott, T.W..,Appl.Phys.Lett. 6, 106 (1965).Google Scholar
6. Hickmott, T.W., J.Vac.Sci.Technol.6, 828 (1969).Google Scholar
7. Chopra, K.L., J.Appl.Phys. 36, 184 (1965).Google Scholar
8. Argall, F., Solid State Electron. 11, 535 (1968).Google Scholar
9. Gibbons, J. F. and Beadle, W. E., Solid-State Electron. 7, 785 (1964).Google Scholar
10. Bruyere, J. C. and Chakraverty, B.K., Appl. Phys. Lett. 16, 40 (1970).Google Scholar
11. Liu, S. Q., Wu, N. J., and Ignatiev, A., Appl. Phys. Lett. 76, 2749 (2000).Google Scholar
12. Villafuerte, M., Heluani, S. P., Juarez, G., Simonelli, G., Duhalde, S. and Braunstein, G., Appl. Phys. Lett. 90, 052105, DOI: 10.1063/1.2437688, (2007).Google Scholar
13. Rosemberg, M.J., Inoue, I. H. and Sanchez, M. J., Phys. Rev. Lett. 92, 178302 (2004).Google Scholar
14. Fors, R., Khartsev, S. I. and Grishin, A. M., Phys. Rev. B 71, 045305, (2005)Google Scholar
15. Tsunada, K., Fukuzumi, Y., Jameson, J. R., Wang, Z., Griffin, P. B. and Nishi, Y.. Appl. Phys. Lett. 90, 113501 (2007).Google Scholar
16. Villafuerte, M., Juarez, G., Comedi, D. and Heluani, S. P., Physica B, in Press (2007)Google Scholar
17. Heluani, S.P., Braunstein, G., Villafuerte, M., Simonelli, G. and Duhalde, S, Thin Solid Film, 515, 2379 (2006).Google Scholar
18. Baikalov, A., Wang, Y. Q., Shen, B., Lorenz, B., Tsui, S., Sun, Y.Y., Xue, Y.Y. and Chu, C. W., Appl. Phys. Lett. 83, 957 (2003).Google Scholar
19. Chen, X., Strozier, J., Wu, N. J., Ignatiev, A., Nian, Y. B., arXiv:cond-mat/0510059.Google Scholar
20. Kim, H., Chae, B., Youn, D., Kim, G., Kang, K.Y., Lee, S. J., Kim, K. and Lim, Y. S., Appl. Phys. Lett. 86, 242102, 2005, Appl. Phys. Lett. 86, 242102, 2005Google Scholar
21."Electrical Properties of ZnO Thin Films Deposited by Pulsed Laser Deposition" Heluani, S. P., Simonelli, G., Villafuerte, M., Juarez, G., Tirpak, A., Braunstein, G., Vignolo, F.. Mater. Res. Soc. Symp. Proc. Vol. 829 © 2005 Materials Research Society.Google Scholar
22. Han, Se-Won, Kang, Hyung, Ko, K. C., Kim, H. S., Proc. of the 5th Conf. of Pro. and Appl. of Dielectric Materials, May 25-30, Seul, Korea 1997.Google Scholar
23.Ab-Initio Study of Interfaces State at metal Contact to III-IV Semicon, Maxsich, Thomas, Nro 2890, Inst. De Theor. De Phenom. Phys. Ecole Poly. Fed. de Lausanne, 2003.Google Scholar
24. IP, K. et al. , J. Cryst. Growth 287, 149 (2006).Google Scholar