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Study of the Crystalline to Amorphous Silicon Boundary Following Laser Induced Solid Phase Epitaxy.

Published online by Cambridge University Press:  15 February 2011

J. P. Gonchond ,
G. A. Rozgonyi  and
D. Bois
J. P. Gonchond
Affiliation:
Cnet/Cns, BP : 42 – 38240, Meylan-Grenoble, France.
G. A. Rozgonyi
Affiliation:
Cnet/Cns, BP : 42 – 38240, Meylan-Grenoble, France.
D. Bois
Affiliation:
Cnet/Cns, BP : 42 – 38240, Meylan-Grenoble, France.
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Abstract

EBIC and voltage contrast SEM microscopy, combined with optical microscopy. chemical etching and Talystep profiling have been used to investigate cw laser annealing of a-Si in the slip-free SPE regime. Special attention is devoted to the edges and extremities of the line scans, i.e. to the c-to a-Si boundary. At very low power, evidence is given for an initial reordering and thus electrical activation stage of the a-Si. For the higher power range regrowth occurs through two different processes. The EBIC yield is interpreted in terms of a balance between annealing of the ion implantation damage and defect generation in the si substrate during the laser annealing. These results are extended to the case of a scanned electron beam annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 189
Copyright
Copyright © Materials Research Society 1982

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References

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