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Study of Temperature and Light Bias Effects on the Occupied Near Surface Defect Density in Hydrogenated Amorphous Silicon
Published online by Cambridge University Press: 25 February 2011
Abstract
The occupied density of states distributions in doped and undoped a-Si:H are investigated. Results reveal the presence of a distinct defect sub-band at 0.6 eV above the valence band edge Ey in n-type and in undoped films. In p-type films, this band is absent. Instead, a new band centered at 0.8 eV above Ev develops. This band is normally unoccupied and is therefore only seen under non-equilibrium conditions. A sub-band at this energy is also discovered in undoped a-Si:H films. The effects of temperature and light bias on these defect sub-bands are discussed.
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- Copyright © Materials Research Society 1990