Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-24T00:48:57.084Z Has data issue: false hasContentIssue false
  • English
  • Français

A Study of Switching Behavior in Pb(Zr,Ti) O3 Thin Films Using X-Ray Diffraction*

Published online by Cambridge University Press:  15 February 2011

Michael O. Eatough ,
Duane Dimos ,
Bruce A. Tuttle ,
William L. Warren  and
R. Ramesh
Michael O. Eatough
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185–0342
Duane Dimos
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185–0342
Bruce A. Tuttle
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185–0342
William L. Warren
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185–0342
R. Ramesh
Affiliation:
Bellcore, Red Bank, NJ 07701
Get access

Abstract

Pb(Zr,Ti)O3 (PZT) thin films are being developed for use in optical and electronic memory devices. To study ferroelectric switching behavior, we have produced relatively untextured PZT thin films on Si substrates. We have developed a method for using x-ray diffraction to observe domain switching in situ. Our study involved the use of a micro-diffractometer to monitor the switching behavior in relatively small (0.7mm diameter) electroded areas. Diffraction analyses were done while DC voltages were applied and removed, representing several places in the hysteresis loop. In particular, we were looking for relative intensity changes in the [h 00],[00l] diffraction peaks as a function of position in the hysteresis loop. Our study indicates that the 90° domain switching exhibited by bulk ferroelectrics, is very limited in films on Si when grain sizes are less than about 1 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 111
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

This work performed at Sandia National Laboratories, which is operated for the U. S. Deparunent of Energy under contract number DE-AC04–94AL8500.

References

REFERENCES

1. Tuttle, B.A., Voigt, J.A., Garino, T.J., Goodnow, D.C., Schwartz, R.W., Lamppa, D.L., Headley, T.J., and Eatough, M.O., Chemically Prepared pb(Zr,Ti)O3 Thin Films: The Effects of Orientation and Stress, (Proc. of IEEE 8th International Symposium on Applications of Ferroelectrics, Greenville, SC, 1992).Google Scholar
2. Tuttle, B.A., Garino, T.J., Voigt, J.A., Headley, T.J., Dimos, D., and Eatough, M.O., Relationships Between Ferroelectric 90° Domain Formation and Electrical Properties of Chemically Prepared Ph (Ti, Zr.)O3 Thin Films. (Proc. NATO Advanced Workshop on Electroceramic Films, Villa del Mar, Italy, 1994.).Google Scholar
3. DeHaven, P.W., Goldsmith, C.C., and Nunes, T.L., Rigaku J., 8, No. 1, 1991.Google Scholar
4. King, G. and Goo, E.K., J. Am. Ceram. Soc. 6 73 (1990).Google Scholar
5. Demczyk, B.G., Rai, R.S., J. Am. Ceram. Soc. 3 73 (1990).Google Scholar
6. Schwartz, R.W., Bunker, B.C., Dimos, D.B., Assink, R.A., Tuttle, B.A., Tallant, D.R., and Weinstock, I.A., Proc. of 3rd Int. Sympo. on Ferroelectrics, 535–46 (1993).Google Scholar
7. Yi, G., Wu, S., and Sayer, M., J. Appl. Phys. 5 64 (1988).Google Scholar
8. Carpenter, D.A., X-Ray Spectrometry 18 253 (1989).Google Scholar
9. Dozier, C.M., Newman, D.A., Gilfrich, J.V., Freitag, R.K., and Kirkland, J.P., Capillary Optics For X-Ray Analysis, edited by Gilfrich, J.V. et. al., Advances in X-Ray Analysis, Vol. 37 (1994).Google Scholar