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A Study of Subsurface Damage Generation by Single Scratches of Silicon

Published online by Cambridge University Press:  28 February 2011

J.H. Ahn  and
S. Danyluk
J.H. Ahn
Affiliation:
University of Illinois at Chicago, Civil Engineering, Mechanics, and Metallurgy Department, P.O. Box 4348, mail code 246, Chicago, IL 60680
S. Danyluk
Affiliation:
University of Illinois at Chicago, Civil Engineering, Mechanics, and Metallurgy Department, P.O. Box 4348, mail code 246, Chicago, IL 60680
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Abstract

This paper describes the use of electrical resistivity to quantify the damage produced asa result of the scratching of single crystal silicon.

The change in resistivity was measured as a function of time as a scratching diamond passed between four electrical contacts of a specially designed printed circuit and while thesilicon was heated to temperatures up to 300ºC. The data shows that the resistivity increases during scratching and reaches a steady state value if the silicon temperatureis below 200ºC. The conductivity recovers when the silicon temperature is 200ºC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 140: Symposium S – New Materials Approaches to Tribology: Theory and Applications , 1988 , 319
Copyright
Copyright © Materials Research Society 1989

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References

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