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Study of Substrate Diffusion in Epitaxial N-Type CdSe Films Grown on GaAs (001) by Pulsed Laser Ablation

  • Jaewon Park (a1), Christopher M. Rouleau (a1) and Douglas H. Lowndes (a1)


N-type CdSe films with thicknesses of 470 - 630 nm were grown on (001) and 2°- miscut GaAs wafers by ArF (193 nm) pulsed laser ablation of stoichiometric CdSe targets at platen temperatures (Tp) of 250 - 425°C in vacuum and ambient Ar gas. Film-substrate interdiffusion was studied with Auger depth profiling, as well as energy dispersive x-ray fluorescent spectroscopy (EDS). Both techniques showed that extensive interdiffusion took place at the film-substrate interface for CdSe films grown at Tp≥ 355°C but was greatly reduced at Tp=250°C. Tilting the substrate to be approximately parallel to the ablation plume as well as decreasing the ambient gas pressure also reduced film-substrate interdiffusion.



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1. Weller, R. G. and Dimmock, J. O., Phys. Rev. 125 (1962) 1805.
2. Samarth, N., Luo, H., Furdyna, J. K., Qadri, S. B., Lee, Y. R., Ramdas, A. K., and Otsuka, N., Appl. Phys. Lett. 54 (1989) 2680.
3. Ohtsuka, T., Kawamata, J., Zhu, Z., and Yao, T., Appl. Phys. Lett. 65 (4) (1994) 466468.
4. Fujita, Shizuo, Wu, Yi-Hong, Kawakami, Yoichi, and Fujita, Shigeo, J. Appl. Phys. 72 (11) (1992) 52335239.
5. Lowndes, D. H., Rouleau, C. M., Geohegan, D. B., Puretzky, A. A., Strauss, M. A., Pedraza, A. J., Budai, J. D., and Poker, D. B., Mater. Res. Soc. Symp. Proc. 397 (1996) 107118.
6. Rouleau, C. M. and Lowndes, D. H., Submitted to Appl. Surf. Sci. (1997).
7. Lowndes, D. H., Geohegan, D. B., Puretzky, A. A., Norton, D. P., and Rouleau, C. M., Science 273 (1996) 898903.
8. Rosenauer, A., Reisinger, T., Steinkirchner, E., Zweck, J., and Gebhardt, W., J. Cryst Growth 152 (1995) 4250.
9. Wu, X., Peng, Z., Yuan, S., and Li, F., J. Appl. Phys. 77(8) (1995) 38183822.
10. Park, J. W., Rouleau, C. M. and Lowndes, D. H., Submitted to J. Cryst. Growth (1998)
11. Park, J. W., Pedraza, A. J., and Allen, W. R., Appl. Surf Sci. 103 (1996) 3948.
12. Rouleau, C. M., Lowndes, D. H., Strauss, M. A., Cao, S., Pedraza, A. J., Geohegan, D. B., Puretzky, A. A., and Allard, L. F., in Advanced Laser Processing of Materials - Fundamental and Applications, Mater. Res. Soc. Symp. Proc., 397 (1996) 119.
13. “Periodic Table of the Elements”, published by Sargent-Welch Science Company, Catalogue Number S-18806 (1979).
14. Guthrie, A., Vacuum Technology, John Wiley & Sons (New York, 1963) 50
15. Geohegan, D. B. and Puretzky, A. A., p. 21 in Film Synthesis and Growth Using Energetic Beams, ed. by Atwater, H. A., Dickinson, J. T., Lowndes, D. H., and Ploman, A., Mater. Res. Soc. Symp. Proc., Pittsburgh, PA (1995).
16. Andersen, H. H., Appl. Phys. 18 (1979) 131.
17. Carter, G. and Colligon, J. S., Ion Bombardment of Solids, Heinemann (London 1968).
18. Seah, M. P., Sanz, J. M., and Hofmann, S., Thin Solid Films 81 (1981) 239.
19. Seah, M. P. and Lea, C., Thin Solid Films 81 (1981) 257.


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