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Study of sputtered Hafnium oxide Films for Sensor Applications

  • H. Grüger (a1), C. Kunath (a1), E. Kurth (a1), S. Sorge (a1) and W. Pufe (a1)...

Abstract

In this paper results of the deposition and annealing of hafnium oxide thin films are reported. Due to the sensor application in mind, thicknesses between 30 and 150 nm have been deposited by r.f. sputtering of a high purity oxide target. Annealing has an important influence on the layer structure, stress and application correlated properties. A detailed understanding of the layer preparation is necessary to adjust deposition and annealing. After deposition the layers are predominately amorphous, annealing leads to textured layers with monocline or orthorhombic phases.

Besides gas sensor applications optimized layers may serve as protective coating or combined with a second material to multi layer stacks as high reflective dielectric mirror.

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1. Lebedinskii, Yu et al., “Silicide formation at HfO2/Si and ZrO2/Si interface induced by Ar+ ion bombardmentMat. Res. Soc. Symp. Proc. 768 (2004) E3.25, 165
2. Duenas, S. et al., “On the interface quality of MIS structures fabricated from Atomic Layer Depostion of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 dielectric thin filmsMat. Res. Soc. Symp. Proc. 786 (2004) E3.18 1
3. Kukli, Kaupo et al. “Effect of selected atomic layer deposition parameters on the structure and properties of hafnium oxide filmsJ. Appl. Phys. 96 (2004) 5298
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6. Grüger, H., Kunath, C., Kurth, E., Pufe, W., Sorge, S. “Improved structural properties of sputtered hafnium dioxide on silicon and silicon oxide for semiconductor and sensor applications” Proceedings of the Materials Research Society Fall Meeting 2003
7. Grüger, H., Kunath, C., Kurth, E., Sorge, S., Pechstein, T. “High quality r.f. sputtered metal oxides (Ta2O5, HfO2) and their properties after annealing”, Solid Films 447–448 (2004) 509–515
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Study of sputtered Hafnium oxide Films for Sensor Applications

  • H. Grüger (a1), C. Kunath (a1), E. Kurth (a1), S. Sorge (a1) and W. Pufe (a1)...

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