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A Study of Silicon Suboxide thin Films by Photoluminescence

Published online by Cambridge University Press:  10 February 2011

F. Wang ,
D.M. Wolfe ,
B.J. Hinds ,
G. Lucovsky ,
R. Platz  and
S. Wagner
F. Wang
Affiliation:
Department of Physics, North Carolina State University, P. O. Box 8202, Raleigh, NC 27695
D.M. Wolfe
Affiliation:
Department of Materials Science, North Carolina State University, P. O. Box 8202, Raleigh, NC 27695
B.J. Hinds
Affiliation:
Department of Physics, North Carolina State University, P. O. Box 8202, Raleigh, NC 27695
G. Lucovsky
Affiliation:
Department of Physics, North Carolina State University, P. O. Box 8202, Raleigh, NC 27695 Department of Materials Science, North Carolina State University, P. O. Box 8202, Raleigh, NC 27695 Department of Electrical and Computer Engineering, North Carolina State University, P. O. Box 8202, Raleigh, NC 27695
R. Platz
Affiliation:
Department of Electrical Engineering, Princeton University
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University
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Abstract

Silicon suboxide (SiOx1 0<x<2) thin films have been investigated by means of photoluminescence, FTIR and photothermal deflection spectroscopy. Results showed that as the oxygen content in the films increases, the temperature dependence of PL intensity (Ipl) becomes weaker, and the PL peak position (Ep) shifts to the visible with decreasing intensity predominantly due to a decrease in the absorption coefficient. After sequential rapid thermal annealing from 500 to 100°C, Ep shifts simply to low photon energy. However, Ip1 of high oxygen content films first increases with increasing annealing temperature (TRTA), then decreases when TRTA>800°C, in contrast to low oxygen content films whose Ip1 monotonically decreases with TRTA and disappears above 700°C. The results are interpreted in terms of inhomogeneity in the as-deposited films, phase segregation upon annealing, and quantum confinement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 267
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Zacharias, M., Dimova-Malinovska, D., and Stutzmann, M., Philos. Mag. B73, p. 799 (1994).Google Scholar
[2] Kenyon, A. J., Trwoga, P. F., Pitt, C.W., and Rehm, G., J. Appl. Phys. 79, p. 9291 (1996).Google Scholar
[3] DiMaria, D. J., Ghez, R., and Dong, D.W., J. Appl. Phys. 51, 4830 (1980).Google Scholar
[4] Tsu, D. V., Lucovsky, G., and Davidson, B. N., Phys. Rev. B40, p.1795 (1989).Google Scholar
[5] Street, R. A., Advances in Physics 30, p.593 (1981).Google Scholar
[5] Shimizu, T., Nakao, S. and Saitoh, K., Appl. Phys. Lett. 65, p. 1814 (1994).Google Scholar
[6] Wang, F., Hinds, B. J., Wolfe, D. M. and Lucovsky, G., MRS Symp. Proc., Fall Meeting, 1997, in press.Google Scholar
[7] Nishikawa, H., Watanabe, E., Ito, D., Sakurai, Y., Nagasawa, K., and Ohki, Y., J. Appl. Phys. 80, p. 3513 (1996).Google Scholar
[8] Fortunato, G. and Sala, D. DellA, J. Non-Cryst. Sol. 97&98, 423 (1987).Google Scholar
[9] Fukukawa, K., Liu, Y., Nakashima, H., Gao, D., Uchino, K., Muraoka, K., Tsuzuki, H., J. Appl. Phys. 72, 725 (1998).Google Scholar
[10] Nesbit, L. A., Appl. Phys. Lett. 46, 38 (1985).Google Scholar
[11] Estes, M. J. and Moddel, G., Appl. Phys. Lett. 68, 1814 (1996).Google Scholar