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A Study of Se+ Implants into Encapsulated GaAs

  • R. Gwilliam (a1), M. A. Shahid (a2) and B. J. Sealy (a1)

Abstract

The effects of implanting Se+ ions through Si N4 layers have been compared with implants into uncapped GaAs. Through nitride implants have a higher residual damage, lower carrier concentration and lower mobility following rapid thermal annealing between 850 and 975 °C. The effect is believed to be due to the interface strain between the encapsulant and the amorphous GaAs.

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[1]. Gwilliam, R., Bensalem, R., Sealy, B.J. and Stephens, K.G., Physica 129B, 440–4 (1985).
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