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A Study of Quasi-Breakdown Mechanism in Ultrathin Gate Oxide Under Various Types of Stress

Published online by Cambridge University Press:  10 February 2011

Hao Guan ,
Zhen Xu ,
Byung Jin Cho ,
M. F. Li  and
Y. D. He
Hao Guan
Affiliation:
Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
Zhen Xu
Affiliation:
Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
Byung Jin Cho
Affiliation:
Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
M. F. Li
Affiliation:
Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
Y. D. He
Affiliation:
Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
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Abstract

The quasi-breakdown (QB) in ultra thin gate oxide is investigated through the observation of defect generation during high field F-N stress and substrate hot hole and hot electron stresses. The interface trap density increases during stress and reaches to a same critical amount at the onset point of QB regardless of stress current density and stressing carrier type. The experiments also show that hot carriers are much more effective to trigger QB than F-N electrons at the same current level. This can be ascribed to the fact that hot carrier has much higher interface state generation rate than F-N electron does. All results consistently support the interface damage model for the QB occurrence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 105
Copyright
Copyright © Materials Research Society 2000

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References

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