Skip to main content Accessibility help
×
Home

A Study of Quasi-Breakdown Mechanism in Ultrathin Gate Oxide Under Various Types of Stress

  • Hao Guan (a1), Zhen Xu (a1), Byung Jin Cho (a1), M. F. Li (a1) and Y. D. He (a1)...

Abstract

The quasi-breakdown (QB) in ultra thin gate oxide is investigated through the observation of defect generation during high field F-N stress and substrate hot hole and hot electron stresses. The interface trap density increases during stress and reaches to a same critical amount at the onset point of QB regardless of stress current density and stressing carrier type. The experiments also show that hot carriers are much more effective to trigger QB than F-N electrons at the same current level. This can be ascribed to the fact that hot carrier has much higher interface state generation rate than F-N electron does. All results consistently support the interface damage model for the QB occurrence.

Copyright

References

Hide All
1. Lee, S. H., Cho, B. J., Kim, J. C. and Choi, S. H., IEDMtech Dig., p. 605, 1994.
2. Okada, K., Kawasaki, S., and Hirofuji, Y., Ext. Abst. of 1994 Int. Conf. Solid State Devices and Materials, p. 565, 1994.
3. Depas, M., Nigam, T., and Heyns, Marc M., IEEE Trans. Electron Devices, vol. 43, p. 1499, 1996.
4. Okada, K., Taniguchi, K., Appl. Phys. Lett., vol. 70, p. 371, 1997.
5. Umeda, K. and Taniguchi, K, J. Appl. Phys. 82, 297 (1997).
6. Neugroschel, A., Sah, C. T., Han, K. M., Carroll, M. S., Nishida, T., Kavalieros, J. T., and Lu, Y., IEEE Trans. Electron Devices, vol. 42, p. 1657, 1995.
7. Jie, B. B., Li, M. F., Lou, C. L., Chim, W. K, Chan, D. S. H., and Lo, K. F., IEEE Electron Device Lett., vol. 18, p. 583, Dec. 1997.
8. Groeseneken, G., Maes, H. E., Beltran, N. and Keersmaecher, R. F. D., IEEE Trans. Electron Devices, vol. 31, p. 42, 1984.
9. Okada, Y., Tobin, P. J., Reid, K.G., Hegde, R. I., Maiti, B., Ajuria, S. A., Symp. on VLSI Technology Digest of Technical Papers, 105 (1994).
10. Kamakura, Y., Utsunomiya, H., Tomita, T., Umeda, K., and Taniguchi, K., IEDM Tech. Digest, 81 (1997).
11. DiMaria, D. J., Cartier, E., and Arnold, D., J. Appl. Phys. 73, 3367 (1993).
12. Takeda, E., Shimizu, A., and Hagiwara, T., IEEE Electron Device Lett. EDL–4, 329 (1983).

A Study of Quasi-Breakdown Mechanism in Ultrathin Gate Oxide Under Various Types of Stress

  • Hao Guan (a1), Zhen Xu (a1), Byung Jin Cho (a1), M. F. Li (a1) and Y. D. He (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed