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A Study of Phase Transition Behaviors of Chalcogenide Layers Using In-situ AC Impedance Spectroscopy

  • Yin-Hsien Huang (a1), Yu-Jen Huang (a1) and Tsung-Eong Hsieh (a1)

Abstract

The electrical properties of chalcogenide thin films, both pristine Ge2Sb2Te5 (GST) and cerium-doped GST (Ce-GST), were investigated by in-situ AC impedance spectroscopy. In conjunction with the brick layer model, the contributions of both the grain and the grain boundary to the phase-transition behaviors of chalcogenide samples could be distinguished; the results illustrated the dominance of the grain boundary in the phase transition process. Moreover, impedance analysis applied to characterize the effects of doping on the phase-transition kinetics yielded results similar to those obtained by conventional methods. Therefore, in-situ AC impedance spectroscopy is a feasible tool for analyzing the phase transitions of chalcogenides.

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A Study of Phase Transition Behaviors of Chalcogenide Layers Using In-situ AC Impedance Spectroscopy

  • Yin-Hsien Huang (a1), Yu-Jen Huang (a1) and Tsung-Eong Hsieh (a1)

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