Skip to main content Accessibility help
×
Home

A Study of Melting and Resolidification of Silicon-on-Insulator Structures Formed by Lateral Epitaxy

  • D A Williams (a1), R A Mcmahon (a1), D G Hasko (a1), H Ahmed (a1), G F Hopper (a2) and D J Godfrey (a2)...

Abstract

The formation of silicon-on-insulator structures, by recrystallising polycrystalline silicon films with a dual electron beam technique, has been studied over a wide range of conditions. The quality of the layers has been assessed by examining cross-sections in the SEM and optical microscopy of the surface after a Secco etch. The range of line powers which gives device-worthy single crystal material becomes greater as the sweep speed increases and as the background temperature is reduced. The extent of melting into the substrate in the seed windows and below the isolating oxide was determined from the movement of an arsenic implant. The experimental results are compared to the predictions from a one dimensional model for the heat flow.

Copyright

References

Hide All
1 Davis, J. R., McMahon, R. A. and Ahmed, H., J. Electrochem. Soc. 132, 1919 (1985).
2 Godfrey, D. J., Hill, A. C. and Hill, C., J. Electrochem. Soc. 128, 1798 (1981).
3 Nissim, Y., Leitoila, A., Gold, R. B. and Gibbons, J. F., J Appl Phys 51, 274 (1980).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed