Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-19T11:03:45.736Z Has data issue: false hasContentIssue false

Study of Ion Implanted Copper Laser Mirrors by Spectroscopic Ellipsometry

Published online by Cambridge University Press:  28 February 2011

P. G. Snyder
Affiliation:
University of Nebraska, Lincoln, NE 68588-0511
A. Massengale
Affiliation:
University of Nebraska, Lincoln, NE 68588-0511
K. Memarzadeh
Affiliation:
University of Nebraska, Lincoln, NE 68588-0511
J. A. Woollam
Affiliation:
University of Nebraska, Lincoln, NE 68588-0511
D. C. Ingram
Affiliation:
Universal Energy Systems, Dayton, OH 45432
P. P. Pronko
Affiliation:
Universal Energy Systems, Dayton, OH 45432
Get access

Abstract

Implantation with 400 keV Ag or Cu ions improves the near-surface microstructural quality and reflectance of diamond turned and mechanically polished flat copper laser mirrors. Spectroscopic ellipsometry is sensitive to changes in either the microscopic surface roughness, or in the nearsurface substrate void fraction, and both parameters are observed to change upon implantation. Substrate density as a function of ion fluence peaks at about 5 × 10 15cm-2. Low energy (300 eV) Ar ion implantation can cause either a reduction or increase in microscopic surface roughness, depending on fluence.

Type
Articles
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Snyder, P.G., Rost, M.C., Bu-Abbud, G.H., Oh, J., Woollam, J.A., Poker, D., Aspnes, D.E., Ingram, D., and Pronko, P., J. Appl. Phys. 60, 779 (1986).CrossRefGoogle Scholar
2. Bu-Abbud, G.H., Mathine, D.L., Snyder, P.G., Woollam, J. A, Poker, D., Bennett, J., Ingram, D., and Pronko, P., J. Appl. Phys. 59, 257 (1986).CrossRefGoogle Scholar
3. Aspnes, D.E., Kinsbron, E., and Bacon, D.D., Phys. Rev. B 21, 3290 (1980).CrossRefGoogle Scholar
4. Aspnes, D.E., Theeten, J.B., and Hottier, F., Phys. Rev. B 20, 3292 (1979).CrossRefGoogle Scholar