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Study of Initial Stages of Heteroepitaxy Using Graded Thickness Samples
Published online by Cambridge University Press: 26 February 2011
Abstract
In this paper we introduce the technique of graded thickness sample deposition to study the heteroepitaxial growth mechanisms of GaAs on Si. We can observe the continuous evolution from the initial clean surface, through nucleation, growth and coalescence of the deposited material.
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- Copyright © Materials Research Society 1988