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Study of Highly Strained Single InAs−In0.53Ga0.47As Quantum Wells from Phonon Modes by Raman Scattering

  • L. G. Quagliano (a1), D. Orani (a1), A. Ricci (a1), M. G. Simeone (a2) and M. R. Bruni (a2)...


We report Raman study of highly strained single InAs−In0.53Ga0.47As quantum wells grown by molecular beam epitaxy (MBE) on InP substrates with the well thickness between 4 and 15 monolayers. We have used Raman spectroscopy to characterize quality, disorder and strain of these structures which are of considerable interest for long wavelength optical communications.

In the Raman spectra we have observed an intense narrow line corresponding to the GaAslike LO mode of In0.53Ga0.47As cap layer and a narrow peak due to the LO phonon mode of the InAs layer. These dominant and sharp features characterize the high homogeneity of our samples. In addition to these features we have observed the appearance of distinct peaks with the increase of the InAs layer thickness. In our opinion the presence of these modes is indicative of a slight deterioration of the structural perfection of the sample with the increase of the well thickness. Our investigation shows the ability of Raman spectroscopy to describe these systems and the good quality of our structures.



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