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Study of Electrical Transport Across Interfaces between Wide Gap Semiconductor and Metal Oxides

  • V. Talyansky (a1), R. D. Vispute (a1), R. P. Sharma (a1), S. Choopun (a1), M. J. Downes (a1), T. Venkatesan (a1), A. A. Iliadis (a2), M. C. Wood (a3), R. T. Lareau (a3) and K. A. Jones (a3)...

Abstract

We have grown YBa2Cu3O7 (YBCO) and Pr1.85Ce0.15CuO4 (PCCO) polycrystalline films on n-type GaN using pulsed laser deposition. The diodes fabricated out of these heterostructures exhibited a strong rectifying behavior with transport characteristics that were found to fit well to the thermionic emission model. The effective barrier heights for YBCO and PCCO based diodes were found to be 788 meV and 236 meV, respectively. Rutherford Backscattering structural analysis of the heterostructures is also discussed.

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