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Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy

  • Huixin Xiu (a1), Pedro MFJ Costa (a2), Matthias Kauer (a3), Tim M Smeeton (a4), Stewart E Hooper (a5), Jonathan Heffernan (a6) and Colin J Humphreys (a7)...

Abstract

This paper reports on the study of defects in p-type layers in III-nitride laser structures grown by molecular beam epitaxy. Characterization of the heterostructures was carried out using atomic force microscopy and transmission electron microscopy. The results show that a high density of extended defects – possibly inversion domains – exist in the p-type cladding layers of as-grown structures with either AlGaN/GaN superlattices or bulk AlGaN cladding layers. TEM analysis of operated and aged devices does not reveal any significant structural modification of the p-type material which might be the cause of deterioration in the lasing performance or failure.

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Keywords

Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy

  • Huixin Xiu (a1), Pedro MFJ Costa (a2), Matthias Kauer (a3), Tim M Smeeton (a4), Stewart E Hooper (a5), Jonathan Heffernan (a6) and Colin J Humphreys (a7)...

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