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The Study of Damage Profile of Ion Implanted Layer on Si by Spectroscopic Ellipsometry

  • Jinshen Luo (a1), P.J. Mc Marr (a1) and K. Vedam (a1)

Abstract

We have determined the dielectric function of silicon samples which were implanted with 100-150 KeV P, As, Si ions to doses of 2·1014-1·1016cm−2, by a rotating analyser Automated ellipsometer in the spectral range 1.77− 4.59 eV. These data have been analyzed using a simplified three layer model.The results are compared with an earlier ellipsometric investigation [2].

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1. Adams, J.R., Surface Science 56, 307 (1976).
2. Luo, J.S. and Chen, M.Q. in: Insulating Films on Semiconductors (Schulz, M. and Pensl, G., Springer-Verlag, Berlin, Heidelberg, New York) 1981, pp. 174178.
3. Nakamura, K., Gotch, T., and Kamoshida, M., J. Appl. Phys. 50, 3985 (1979).
4. Motooka, T. and Watanabe, K.. J. Appl. Phys. 51, 4128 (1980).
5. Corbot, J.P., Ged, Ph.., Appl. Phys. Lett. 41, 93 (1982).

The Study of Damage Profile of Ion Implanted Layer on Si by Spectroscopic Ellipsometry

  • Jinshen Luo (a1), P.J. Mc Marr (a1) and K. Vedam (a1)

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