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A Study of Damage in Silicon Created By and P+ Implantation

Published online by Cambridge University Press:  26 February 2011

Fang Ziwei ,
Lin Chenglu  and
Tsou Shihchang
Fang Ziwei
Affiliation:
Ion Beam Laboratory Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Lin Chenglu
Affiliation:
Ion Beam Laboratory Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Tsou Shihchang
Affiliation:
Ion Beam Laboratory Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
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Abstract

The damage and annealing behavior of <100> Si implanted at room temperature by and P+ at different energies (5-600KeV) and intermediate dose (∼1014/cm2) has been investigated. Experimental results show that the damage created by implantation is always greater than that of P+ implantation. The ratio of total displaced atoms of the target cuased by molecular and atomic implantation, ND(mol)d/ND(atom) reached a maximal value at 100KeV () and 50KeV (P+) after rapid thermal annealing, the carrier concentration profiles measured by spreading resistance measurements are also different for the and P+ implanted samples. We attribute essentially this phenomenon to the displacement spike, but the multiple collision effect and the interaction between two molecular fragments should be considered while the incident energy is high.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 255
Copyright
Copyright © Materials Research Society 1988

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References

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