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Study of crystalline structure N-doped GeSb Phase Change Material for PCRAM applications

Abstract

100 nm-thick GeSbN films with high Sb content were investigated by XRD and TEM in order to investigate crystalline phases. We observe the crystallization of the two phases separatly. First, Sb rhomboedral crystallizes at 250°C and then cubic Ge appears at 340°C according to Reflectivity and X-Ray Diffraction measurements. With the incorporation of nitrogen in the thick films, a delay to crystallization of the two phases is observed. Grain size measurements with Scherrer formula support the decrease of grain crystallization with N content. Moreover, TEM observations show clearly the separation of the two phases in the layer and the reduction in size of the grains with nitrogen content. This allows a better re-amorphization than films without nitrogen.

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