Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-17T21:43:02.187Z Has data issue: false hasContentIssue false
  • English
  • Français

Studies of the Etching of Si, SiO2 and Mo by Carbon Fluorine Compounds Using Real Time Auger Spectroscopy

Published online by Cambridge University Press:  21 February 2011

D. Thomson  and
C. R. Helms
D. Thomson
Affiliation:
Stanford Electronics Laboratories Stanford University Stanford, California 94305
C. R. Helms
Affiliation:
Stanford Electronics Laboratories Stanford University Stanford, California 94305
Get access

Abstract

The ion etching of Si, SiO2 and Mo by fluorocarbon ions was studied using real time Auger electron spectroscopy. The carbon in the CF3+ ions was found to react rapidly with SiO2 to form volatile products, resulting in a very low carbon concentration on the SiO2 surface. Both Si and Mo formed carbides when bombarded with CF3+ ions. This resulted in a high carbon concentration on these surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 155
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Coburn, J. W., Winters, H. F., and Chang, T. J., J. Appl. Phys. 48, 3532 (1977).Google Scholar
[2] Tu, Yung-Yi, Chuang, T. J., and Winters, H. F., Phys. Rev. B 23, 823 (1981).Google Scholar
[3] Thomson, D. and Helms, C. R., to be published.Google Scholar
[4] Madden, H. H., J. Vac. Sci. Technol. 18, 677 (1981).Google Scholar