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Studies of Dislocation Formation in Annealed Self-Ion Irradiated Silicon

  • R. D. Goldberg (a1), T. W. Simpson (a1), I. V. Mitchell (a1) and P. J. Schultz. (a1)

Abstract

Variable energy positron annihilation and Rutherford backscattering spectroscopy have been used to investigate the evolution of secondary defects during the annealing of self-ion irradiated silicon. Evidence supporting the existence of both vacancy- and interstitially-based defects after high temperature anneals is presented. Dopant type and irradiation temperature have both been shown to influence the structure of the defects whose onset can be manipulated via the implantation flux.

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Studies of Dislocation Formation in Annealed Self-Ion Irradiated Silicon

  • R. D. Goldberg (a1), T. W. Simpson (a1), I. V. Mitchell (a1) and P. J. Schultz. (a1)

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