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Studies of Carbon Nitride Thin Films Synthesized by KrF Excimer Ablation of Graphite in Nitrogen Atmosphere

Published online by Cambridge University Press:  15 February 2011

Z.M. Ren ,
Y.F. Lu ,
W.D. Song ,
D.S.H. Chan ,
T.S. Low ,
K. Gamani ,
G. Chen  and
K. Li
Z.M. Ren
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
Y.F. Lu
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
W.D. Song
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
D.S.H. Chan
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
T.S. Low
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
K. Gamani
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
G. Chen
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
K. Li
Affiliation:
Department of Physics, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
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Abstract

Carbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in nitrogen atmosphere. Different fluences of the excimer laser and pressures of the nitrogen atmosphere were used in order to achieve a high nitrogen content in the deposited thin films. Fourier Transform Infra-red (FTIR) and X-ray photoelectron spectroscopy (XPS) were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The highest N/C ratio 0.42 was achieved at an excimer laser fluence of 0.8 Jcm -2with a repetition rate of 10 Hz under the nitrogen pressure of PN=100 mTorr. A high content of C=N double bond instead of C-N triple bond was indicated in the deposited thin films. Ellipsometry was used to analyze the optical properties of the deposited thin films. The carbon nitride thin films have amorphous-semiconductor-like characteristics with the optical band gap Eop, as high as 0.42 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 526: Symposium Y – Advances in Laser Ablation of Materials , 1998 , 343
Copyright
Copyright © Materials Research Society 1998

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