Skip to main content Accessibility help
×
Home

Structuring of Silicon Wafer Surfaces on the Sub-100 nm Scale by Hydrogen Plasma Treatments

  • R. Job (a1), Y. Ma (a1) and A. G. Ulyashin (a1) (a2)

Abstract

Hydrogen plasma treatments applied on standard Czochralski silicon (Cz Si) wafers cause a structuring of the surface regions on the sub-100 nm scale, i.e. a thin ‘nano-structured’ Si layer is created up to a depth of ∼ 150 nm. The formation of the ‘nano-structures’ and their evolution in dependence on the process conditions was studied. The impact of post-hydrogenation annealing on the morphology of the structural defects was studied up to 1200 °C. The H-plasma treated and annealed samples were analyzed at surface and sub-surface regions by scanning electron microscopy (SEM), atomic force microscopy (AFM), and μ-Raman spectroscopy.

Copyright

References

Hide All
1. Pankove, J.I., Johnson, N.M., Hydrogen in Semiconductors (Academic Press, New York, 1991).
2. Pearton, S.J., Corbett, J.W., Stavola, M., Hydrogen in Crystalline Semiconductors (Springer, Berlin, Heidelberg, New York, 1992).
3. Shimura, F. (Ed.), Oxygen in Silicon (Academic Press, New York, 1994).
4. Stein, H.J., Hahn, S.K., Appl. Phys. Lett. 56, 63 (1990).
5. Stein, H.J., Hahn, S.K., J. Appl. Phys. 75, 3477 (1994).
6. Stein, H.J., Hahn, S.K., J. Electrochem. Soc. 142, 1242 (1995).
7. Job, R., Borchert, D., Bumay, Y. A., Fahrner, W. R., Grabosch, G., Khorunzhii, I. A., Ulyashin, A. G., MRS Symp. Proc. Series 469, 101 (1997).
8. Ulyashin, A. G., Bumay, Y. A., Job, R., Fahrner, W. R., Appl. Phys. A 66, 399 (1998).
9. Job, R., Fahrner, W. R., Kazuchits, N. N., Ulyashin, A. G., MRS Symp. Proc. Series 513, 337 (1998).
10. Job, R., Ulyashin, A.G., Fahrner, W.R., Mater. Sci. Engineer. B 73, 197 (2000).
11. Job, R., Ulyashin, A.G., Huang, Y.L., Fahrner, W.R., Simoen, E., Claeys, C., Niedernostheide, F.J., Schulze, H.J., MRS Symp. Proc. Series 719, 257 (2002).
12. Johnson, N.N., Ponce, F.A., Street, R.A., Nemanich, R.J., Phys. Rev. B 35, 4166 (1987).
13. Job, R., Ulyashin, A.G., Fahrner, W.R., Mater. Sci. Semicond. Proc. 4, 257 (2001).
14. Job, R., Beaufort, M.F., Barbot, J.F., Ulyashin, A.G., Fahrner, W.R., MRS Symp. Proc. Series 719, 217 (2002).
15. Job, R., Ulyashin, A.G., Fahrner, W.R., Beaufort, M.F., Barbot, J.F., The European Physical Journal -Applied Physics 23, 25 (2003).
16. Job, R., Ulyashin, A.G., Fahrner, W.R., Nucl. Instr. & Meth. in Phys. Res. B 186, 132 (2002).
17. Anastassakis, E., Pinczuk, A., Burstein, E., Pollak, F.H., Cardona, M., Solid State Comm. 8, 133 (1970).
18. De Wolf, I., Semicond. Sci. Technol. 11, 139 (1996).
19. De Wolf, I., Maes, H. E., Jones, S.K., J. Appl. Phys. 79, 7148 (1996).
20. De Wolf, I., Anastassakis, E., J. Appl. Phys. 85, 7484 (1999).
21. Senez, V., Armigliato, A., De Wolf, I., Carnevale, G., Balboni, R., Frabboni, S., Benedetti, A., J. Appl. Phys. 94, 5574 (2003).
22. Job, R., Ma, Y., Huang, Y.L., Ulyashin, A.G., Fahrner, W.R., Beaufort, M.F., Barbot, J.F., Diffusion & Defect Data Pt. B: Solid State Phenomena 95–96, 141 (2003).

Structuring of Silicon Wafer Surfaces on the Sub-100 nm Scale by Hydrogen Plasma Treatments

  • R. Job (a1), Y. Ma (a1) and A. G. Ulyashin (a1) (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed