Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-24T01:59:04.876Z Has data issue: false hasContentIssue false
  • English
  • Français

Structuring of Silicon Wafer Surfaces on the Sub-100 nm Scale by Hydrogen Plasma Treatments

Published online by Cambridge University Press:  01 February 2011

R. Job ,
Y. Ma  and
A. G. Ulyashin
R. Job
Affiliation:
University of Hagen (LGBE), P.O. Box 940, D-58084 Hagen, Germany
Y. Ma
Affiliation:
University of Hagen (LGBE), P.O. Box 940, D-58084 Hagen, Germany
A. G. Ulyashin
Affiliation:
University of Hagen (LGBE), P.O. Box 940, D-58084 Hagen, Germany IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Get access

Abstract

Hydrogen plasma treatments applied on standard Czochralski silicon (Cz Si) wafers cause a structuring of the surface regions on the sub-100 nm scale, i.e. a thin ‘nano-structured’ Si layer is created up to a depth of ∼ 150 nm. The formation of the ‘nano-structures’ and their evolution in dependence on the process conditions was studied. The impact of post-hydrogenation annealing on the morphology of the structural defects was studied up to 1200 °C. The H-plasma treated and annealed samples were analyzed at surface and sub-surface regions by scanning electron microscopy (SEM), atomic force microscopy (AFM), and μ-Raman spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 788: Symposium L – Continuous Nanophase and Nanostructured Materials , 2003 , L3.34
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pankove, J.I., Johnson, N.M., Hydrogen in Semiconductors (Academic Press, New York, 1991).Google Scholar
2. Pearton, S.J., Corbett, J.W., Stavola, M., Hydrogen in Crystalline Semiconductors (Springer, Berlin, Heidelberg, New York, 1992).Google Scholar
3. Shimura, F. (Ed.), Oxygen in Silicon (Academic Press, New York, 1994).Google Scholar
4. Stein, H.J., Hahn, S.K., Appl. Phys. Lett. 56, 63 (1990).Google Scholar
5. Stein, H.J., Hahn, S.K., J. Appl. Phys. 75, 3477 (1994).Google Scholar
6. Stein, H.J., Hahn, S.K., J. Electrochem. Soc. 142, 1242 (1995).Google Scholar
7. Job, R., Borchert, D., Bumay, Y. A., Fahrner, W. R., Grabosch, G., Khorunzhii, I. A., Ulyashin, A. G., MRS Symp. Proc. Series 469, 101 (1997).Google Scholar
8. Ulyashin, A. G., Bumay, Y. A., Job, R., Fahrner, W. R., Appl. Phys. A 66, 399 (1998).Google Scholar
9. Job, R., Fahrner, W. R., Kazuchits, N. N., Ulyashin, A. G., MRS Symp. Proc. Series 513, 337 (1998).Google Scholar
10. Job, R., Ulyashin, A.G., Fahrner, W.R., Mater. Sci. Engineer. B 73, 197 (2000).Google Scholar
11. Job, R., Ulyashin, A.G., Huang, Y.L., Fahrner, W.R., Simoen, E., Claeys, C., Niedernostheide, F.J., Schulze, H.J., MRS Symp. Proc. Series 719, 257 (2002).Google Scholar
12. Johnson, N.N., Ponce, F.A., Street, R.A., Nemanich, R.J., Phys. Rev. B 35, 4166 (1987).Google Scholar
13. Job, R., Ulyashin, A.G., Fahrner, W.R., Mater. Sci. Semicond. Proc. 4, 257 (2001).Google Scholar
14. Job, R., Beaufort, M.F., Barbot, J.F., Ulyashin, A.G., Fahrner, W.R., MRS Symp. Proc. Series 719, 217 (2002).Google Scholar
15. Job, R., Ulyashin, A.G., Fahrner, W.R., Beaufort, M.F., Barbot, J.F., The European Physical Journal -Applied Physics 23, 25 (2003).Google Scholar
16. Job, R., Ulyashin, A.G., Fahrner, W.R., Nucl. Instr. & Meth. in Phys. Res. B 186, 132 (2002).Google Scholar
17. Anastassakis, E., Pinczuk, A., Burstein, E., Pollak, F.H., Cardona, M., Solid State Comm. 8, 133 (1970).Google Scholar
18. De Wolf, I., Semicond. Sci. Technol. 11, 139 (1996).Google Scholar
19. De Wolf, I., Maes, H. E., Jones, S.K., J. Appl. Phys. 79, 7148 (1996).Google Scholar
20. De Wolf, I., Anastassakis, E., J. Appl. Phys. 85, 7484 (1999).Google Scholar
21. Senez, V., Armigliato, A., De Wolf, I., Carnevale, G., Balboni, R., Frabboni, S., Benedetti, A., J. Appl. Phys. 94, 5574 (2003).Google Scholar
22. Job, R., Ma, Y., Huang, Y.L., Ulyashin, A.G., Fahrner, W.R., Beaufort, M.F., Barbot, J.F., Diffusion & Defect Data Pt. B: Solid State Phenomena 95–96, 141 (2003).Google Scholar