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Structure of Thermally-Induced Microdefects in Czochralski Silicon

Published online by Cambridge University Press:  21 February 2011

F. A. Ponce  and
S. Hahn
F. A. Ponce*
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, California 94304.
S. Hahn
Affiliation:
Siltec Corporation, Mountain View, California 94043
*
*) Present address: Xerox Palo Alto Research Center, Palo Alto, CA 94304, USA.
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Abstract

The process of oxygen precipitation in Czochralski silicon materials has been studied using high resolution transmission electron microscopy. The resulting structure depends strongly on the thermal history of the material. The initial stages of precipitation involve the formation of clusters exhibiting strain fields which are coherent and isotropic at intermediate temperatures (∼7000°C). Incoherent defects are formed when the interstitial oxygen precipitates into substitutional sites in the silicon lattice. For long-time anneals, the quasi-equilibrium defect structure ranges from needle-like coesite (450–600°C), silica platelets (600–1000°C) to polyhedral silica precipitates (900–1200°C).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 31: Symposium N – Electron Microscopy of Materials , 1983 , 153
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. de Kock, A. J. R., 1976 Crystal Growth and Materials, Kaldis, E. and Scheel, H. J., eds. (North Holland, Amsterdam, 1977) p. 662.Google Scholar
2. Hu, S. M., J. Vacuum Sci. Technol. 14, 17 (1977).CrossRefGoogle Scholar
3. Tan, T. Y. and Tice, W. K., Philos. Mag. 34, 615 (1076).CrossRefGoogle Scholar
4. Maher, D. M., Staudinger, A., and Patel, J. R., J. Appl. Phys. 47, 3813 (1976).CrossRefGoogle Scholar
5. Tempelhoff, K., Spiegelber, F., Gleichmann, R., and Wruck, D., Phys. Status Solidi A 26, 213 (1979).CrossRefGoogle Scholar
6. Ponce, F. A., Yamashita, T., and Hahn, S., Defects in Silicon, Bullis, W. M. and Kimmerling, L. C., eds. (Electrochemical Soc., Pennington, NJ, 1983), pp. 105–114.Google Scholar
7. Ponce, F. A., Yamashita, T., and Hahn, S., Appl. Phys. Lett. 43, 1051 (1983)..CrossRefGoogle Scholar
8. Tiller, W. A., Hahn, S. and Ponce, F. A., J. Electrochem. Soc. (to be published).Google Scholar
9. Ashby, M. F. and Brown, M., Phil. Mag. 8, 1083 and 1649 (1963).Google Scholar
10. Tempelhoff, K. and Spiegelberg, F., Semiconductor Silicon, Huff, H. and Sirtl, E., eds. (Electrochemical Soc., Pennington, NJ, 1977), pp. 585–595.Google Scholar
11. Bourret, A., Thibault-Desseaux, J. and Seidman, D. N., J. Appl. Phys. 55, 825 (1984).CrossRefGoogle Scholar