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Structure of Polycrystalline Silicon Films by Glow-Discharge Decomposition using SiH4/H2/SiF4 at Low Temperature

Published online by Cambridge University Press:  21 February 2011

R. Tsuchida ,
M. Syed ,
T. Inokuma ,
Y. Kurata  and
S. Hasegawa
R. Tsuchida
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920-8667, Japan
M. Syed
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920-8667, Japan
T. Inokuma
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920-8667, Japan
Y. Kurata
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920-8667, Japan
S. Hasegawa
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920-8667, Japan
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Abstract

For poly-Si films prepared by a plasma-enhanced chemical vapor deposition, we examined the changes in the local structure caused by adding H2 and/or SiF4 in the SiH4 feed gases and by changing supplied rf power values. The conditions of low rf power supply, low H2 addition, and SiF4 addition allow formation of films with microcrystalline or nanocrystalline structures. In addition, the H2 or SiF4 addition was found to be effective in promotive growth of <111> or <110> grains, respectively. In such low crystallized films, it was suggested that high-angle boundary would be formed, leading to a decrease in the density of SiH2 and Si dangling bonds, and to an increase in g values.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 581: Symposium F – Nanophase & Nanocomposite Materials II , 1999 , 199
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Tsu, R., Gonzales-Hernandez, G., Chao, S. S., Lee, S. C., and Tanaka, K., Appl. Phys. Lett., 40, 534 (1982).Google Scholar
2. Syed, M., Inokuma, T., Kurata, Y., and Hasegawa, S., Jpn. J. Appl. Phys., 36, 6625 (1997).Google Scholar
3. Syed, M., Inokuma, T., Kurata, Y., and Hasegawa, S., Jpn. J. Appl, Phys., 38, 1303 (1999).Google Scholar
4. Ali, A. M., Inokuma, T., Kurata, Y., and Hasegawa, S., Jpn. J. Appl. Phys., 38, 6047 (1999).Google Scholar
5. Pauling, L.: The Nature of the Chemical Bond, 3rd ed., Cornell University Press, New York, 1960, p. 75.Google Scholar
6. Cully, B. D., Element of x-ray Diffraction, 2nd ed., Addison-Wesley, Massachusetts, 1978, p. 102.Google Scholar
7. Kakinuma, H., Mohri, M., and Tsuruoka, T., J. Appl. Phys., 77, 646 (1995).Google Scholar
8. Kim, S. K., Park, K. C., and Jang, J., J. Appl. Phys., 77, 5115 (1995).Google Scholar
9. Matsuda, A., J. Non-Cryst. Solids, 59&60, 767 (1983).Google Scholar
10. Hasegawa, S., Uchida, N., Takenaka, S., Inokuma, T., and Kurata, Y., Jpn. J. Appl. Phys., 37, 4711 (1998).Google Scholar
11. Park, Y.-B and Rhee, S.-W., Appl. Phys. Lett., 68, 2219 (1996).Google Scholar
12. Langford, A. A., Mahan, A. H., Fleet, M. L., and Bende, J., Phys. Rev. B, 41, 8359 (1990).Google Scholar
13. Miyajima, H., Katsumata, R., Nakasaki, Y., and Hayasaka, N., Jpn. J. Appl. Phys., 35, 6217 (1996).Google Scholar
14. Ishii, N., Kumeda, M., and Shimizu, T., Jpn. J. Appl. Phys., 20, L673 (1981).Google Scholar
15. Hasegawa, S., Fujimoto, E., Inokuma, T., and Kurata, Y., J. Appl. Phys., 77, 357 (1995).Google Scholar