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The Structure of Interfaces in Oxide Heterojunctions Formed by CVD

Published online by Cambridge University Press:  25 February 2011

Lisa A. Tietz ,
Scott. R. Summerfelt  and
C. Barry Carter
Lisa A. Tietz
Affiliation:
Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14853
Scott. R. Summerfelt
Affiliation:
Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14853
C. Barry Carter
Affiliation:
Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14853
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Abstract

Weak-beam imaging is used to characterize the interface structure of hematite (α-Fe2O3)/ sapphire (α-Al2O3) heterojunctions parallel to (0001). The heterojunctions were prepared by lowpressure chemical vapor deposition of hematite directly onto electron-transparent sapphire substrates. Bright-field imaging and selected-area diffraction show that the growth is epitactic. The 5.5% lattice misfit at the interface is found to be accommodated by one of two different hexagonal dislocation networks: (1) b = 1/3<1210> or (2) b = 1/3<1010>. The latter are associated with a “basal twin”-type orientation relationship of the hematite and the alumina.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 209
Copyright
Copyright © Materials Research Society 1990

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References

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