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Structure of InAs Quantum Dots in Si Matrix Investigated by High Resolution Electron Microscopy

Published online by Cambridge University Press:  10 February 2011

N. D. Zakharov ,
P. Werner ,
V. M. Ustinov ,
A.R. Kovsh ,
G. E. Cirlin ,
O.V. Smolski ,
D.V. Denisov ,
Zh. I. Alferov ,
N. N. Ledentsov  and
R. Heitz
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N. D. Zakharov
Affiliation:
Technical University of Berlin, Germany. Max-Planck Institute of Microstructure Physics, Halle/Saale, Germany
P. Werner
Affiliation:
Max-Planck Institute of Microstructure Physics, Halle/Saale, Germany
V. M. Ustinov
Affiliation:
A.F. loffe Physical-Technical Institute, St.Petersburg, RUSSIA.
A.R. Kovsh
Affiliation:
A.F. loffe Physical-Technical Institute, St.Petersburg, RUSSIA.
G. E. Cirlin
Affiliation:
A.F. loffe Physical-Technical Institute, St.Petersburg, RUSSIA.
O.V. Smolski
Affiliation:
A.F. loffe Physical-Technical Institute, St.Petersburg, RUSSIA.
D.V. Denisov
Affiliation:
A.F. loffe Physical-Technical Institute, St.Petersburg, RUSSIA.
Zh. I. Alferov
Affiliation:
A.F. loffe Physical-Technical Institute, St.Petersburg, RUSSIA.
N. N. Ledentsov
Affiliation:
Technical University of Berlin, Germany. A.F. loffe Physical-Technical Institute, St.Petersburg, RUSSIA.
R. Heitz
Affiliation:
Technical University of Berlin, Germany.
D. Bimberg
Affiliation:
Technical University of Berlin, Germany.
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Abstract

Quantum dot structures containing 2 and 7 layers of small coherent InAs clusters embedded into a Si single crystal matrix were grown by MBE. The structure of these clusters was investigated by high resolution transmission electron microscopy. The crystallographic quality of the structure severely depends on the substrate temperature, growth sequence, and the geometrical parameters of the sample. The investigation demonstrates that Si can incorporate a limited volume of InAs in a form of small coherent clusters about 3 nm in diameter. If the deposited InAs layer exceeds a critical thickness, large dislocated InAs precipitates are formed during Si overgrowth accumulating the excess of InAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 299
Copyright
Copyright © Materials Research Society 2000

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References

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