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Structure of a-Si:H/SnO2 Interface Characterized By Xps

Published online by Cambridge University Press:  25 February 2011

H. Koinuma ,
M. Nakano  and
S. Gonda
H. Koinuma
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta 4259, Midori-ku, Yokohama, 227, Japan
M. Nakano
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta 4259, Midori-ku, Yokohama, 227, Japan
S. Gonda
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta 4259, Midori-ku, Yokohama, 227, Japan
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Abstract

The interface structure of a-Si:H films deposited by glow discharge decomposition of Si2H6 on SnO2 was characterized on an atomic scale with the use of in situ XPS. The method analyzes the variation of the intensity of photoelectron emission originating from the bottom SnO2 layer and transmitting through the upper a-Si:H layers of various thicknesses. It was evaluated that a-Si:H was partially oxidized as it grew to a thickness of about 15 A, while the SnO2 bottom layer was reduced to metallic Sn and SnOx (0 < x < 2) states as deep as 2 A and 12 A from the interface, respectively,

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 201
Copyright
Copyright © Materials Research Society 1990

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References

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