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The Structure of a-Si:H,F/a-Si,Ge:H,F Interfaces *)

  • J. P. Conde (a1), D.-S. Shen (a1), I. H. Campbell (a1), P. M. Fauchet (a1) and S. Wagner (a1)...

Abstract

We study the interface between un-alloyed a-Si:H,F and an a-Si0.4,Ge0.6:H,F alloy using superlattice structures. From infrared spectroscopy we estimate a width of 8 A for the excess hydrogen layer, and X-ray diffraction data give us a width of 2Å contributing to the width of the diffraction peak. Vibrational Raman scattering data show that the ratios of the number of Si-Si, Ge-Ge and Si-Ge bonds is not altered by changing the number of interfaces. This fact allows us to establish an upper limit for the interface width of 3 atomic layers, i.e. one layer in each partner plus an intermediate layer.

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Work supported by the Electric Power Research Institute

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[1] Persans, P.D., Ruppert, A.F., Abeles, B., and Tiedje, T., Phys. Rev. B 32, 5558 (1985)
[2] Abeles, B., Yang, L., Persans, P.D., Stasiewsky, H.S. and Lanford, W., Appl. Phys. Lett. 48, 168 (1986)
[3] Kolodzey, J., Okada, Y., Shen, D.-S., Chou, S.-F., Schwartz, R. and Wagner, S., “X-Ray Diffraction and Infrared Absorption of Annealed a-SkFLF/a-Si:H,F/a-Si1-x,Gex:H,F Supperlattices”, presented at the Metallurgical Society Meeting on Semiconductor-based Heterostructures, May 1–2, 1986, Murray Hill, NJ, to be published.
[4] Kolodzey, J., Aljishi, S., Schwarz, R. and Wagner, S., “Properties of a-Si,Ge:H,F Alloys Prepared by RF Glow Discharge in and UHV Reactor”, J. Vac. Sci. Tech. A, November/December 1986
[5] Kolodzey, J., Aljishi, S., Schwarz, R., Shen, D.-S., Quinlan, S., Lyon, S.A. and Wagner, S., MRS Symposia Proceedings, 70, 429
[6] Lucovsky, G., Galeener, F.L., Keezer, R.C., Geils, R.H. and Six, H.A., Phys. Rev. B 10, 5134 (1974)
[7] Shen, D.-S., Kolodzey, J., Slobodin, D., Conde, J.P., Lane, C., Campbell, I.H., Fauchet, P.M. and Wagner, S., MRS Symposia Proceedings, 70, 301
[8] Fang, C.J., Gruntz, K.J., Ley, L. and Cardona, M., J. Non-Cryst. Solids, 35 & 36, 255 (1980)
[9] Antoine, A.M. and Drevillon, B., “A Spectrocopic Ellipsometric Study Of a-Ge:H/a-Si:H Interfaces”,to be published
[10] Phillips, J.C., “Bonds and Bands in Semiconductors”, Academic Press, New York, 1973, p. 22

The Structure of a-Si:H,F/a-Si,Ge:H,F Interfaces *)

  • J. P. Conde (a1), D.-S. Shen (a1), I. H. Campbell (a1), P. M. Fauchet (a1) and S. Wagner (a1)...

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