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The Structure of a Near Coincidence Σ=5, [001] Twist Boundary in Silicon

  • Mark Vaudin (a1) and Dieter Ast (a1)

Abstract

The dislocation structure of a near coincidence Σ=5 [001]twist boundary in silicon was studied using transmission electron microscopy. Secondary dislocations, with localized cores, were observed in the boundary accommodating a small deviation (<.5°) from perfect coincidence. The O-lattice theory for general low angle boundaries was extended to calculate the expected dislocation content of near coincidence boundaries. Comparison between predictions and observations was used to deduce information on the primary dislocation structure of the boundary.

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The Structure of a Near Coincidence Σ=5, [001] Twist Boundary in Silicon

  • Mark Vaudin (a1) and Dieter Ast (a1)

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