Skip to main content Accessibility help
×
Home

Structure and photoluminescence investigations of Er doped GaN layers grown by MBE

  • T. Wojtowicz (a1), H. M. Ng (a2) and P. Ruterana (a1)

Abstract

In this work, we carry out TEM analysis on GaN layers grown on sapphire and doped in situ by MBE. In parallel, photoluminescence and electroluminescence experiments are used to determine the possible emission of the grown layers. It has been shown previously that the emission peaks at Er concentrations of about 1% and that their intensity dramatically decreases with increasing Er concentration probably due to compositional quenching. We report on the evolution of the microstructure versus composition and try to explain the quenching effects that can be related to the microstructure.

Copyright

Corresponding author

* Author for Correspondence email: ruterana@ismra.fr, Tel: +33 2 31 45 26 53, Fax: +33 2 31 45 26 60

References

Hide All
1. Steckl, A. J. and Zavada, J. M., MRS Bull. 24, 33 (1999)
2. Lee, D. S., Heikenfeld, J., Steckl, A. J., Hommerrich, U., Seo, J.T., Braud, A. and Zavada, J., Appl. Phys. Lett. 79, number 6 (2001).
3. Steckl, A. J. and Birkhahn, R., Appl. Phys. Lett. 73, 1700 (1998).
4. Thaik, M., Hommerich, U., Schwartz, R. N., Wilson, R. G., and Zavada, J. M., Appl. Phys. Lett. 71, 2641 (1997).
5. Zavada, J. M., Thaik, M., Hommerich, U., MacKenzie, J. D., Abernathy, C. R., and Pearton, S. J., J. Alloys Compd. 300–301, 207 (2000).
6. Wojtowicz, T. at al. in Mater. Sci. Engin. B, vol 105, to appear dec 15 2003

Related content

Powered by UNSILO

Structure and photoluminescence investigations of Er doped GaN layers grown by MBE

  • T. Wojtowicz (a1), H. M. Ng (a2) and P. Ruterana (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.