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Structure and Magnetic Properties of Fe-N Thin Films Grown by ECR Deposition

  • Š émeth (a1), H. Akinaga (a2), H. Boeve (a1), H. Bender (a1), J. de Boeck (a1) and G. Borghs (a1)...

Abstract

The growth of FexNy thin films on GaAs, In0.2Ga0.8As, and SiO2/Si substrates using an ultra high-vacuum (UHV) deposition chamber equipped with electron cyclotron resonance (ECR) microwave plasma source is presented. The structural properties of the deposited films have been measured using various techniques as x-ray diffraction (XRD), Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). The results of XRD measurements show that the films consist of a combination of α-Fe, α'-Fe, y-Fe4N, and α”- Fe16N2 phases. The depth profiles, calculated from the Auger peak intensities, show a uniform nitrogen concentration through the films. The TEM reveals a columnar structure of these films. The properties of the different Fe-N layers have been exploited in the fabrication of Fe(N) / FexNy / Fe trilayer structures, where Fe(N) means a slightly nitrogen doped Fe film. The magneto-transport properties of this trilayer structure grown on In0.2Ga0.8As substrates are presented.

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Structure and Magnetic Properties of Fe-N Thin Films Grown by ECR Deposition

  • Š émeth (a1), H. Akinaga (a2), H. Boeve (a1), H. Bender (a1), J. de Boeck (a1) and G. Borghs (a1)...

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