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Structure and Electronic Parameters of A-Si:H Deposited by DC-MASD

  • O. A. Golikova (a1), A. N. Kuznetsov (a1), V. Kh. Kudoyarova (a1), M. M. Kazanin (a1), G. J. Adriaenssens (a2) and H. Herremans (a2)...

Abstract

A systematic study of structure and electronic parameters of a-Si:H deposited by dc-magnetron assisted SiH4 decomposition (MASD) depending on substrate temperature, gas pressure, gas flow and grid mounting has been carried out. Correlation between the film microstructure, dangling bond density and electron mobility-life time product were established. The photoconductivity changes under light soaking were shown to be minimal when the films contained hydrogen in the (SiH2)n chains.

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Structure and Electronic Parameters of A-Si:H Deposited by DC-MASD

  • O. A. Golikova (a1), A. N. Kuznetsov (a1), V. Kh. Kudoyarova (a1), M. M. Kazanin (a1), G. J. Adriaenssens (a2) and H. Herremans (a2)...

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