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Structure and Characteristics of Strained-Si-On-Insulator (Strained-SOI) MOSFETs

  • Shin-ichi Takagi (a1), Tsutomu Tezuka (a1), Naoharu Sugiyama (a1), Tomohisa Mizuno (a1) and Atsushi Kurobe (a1)...

Abstrct:

Strained-Si MOSFET is an attractive device structure to be able to relax several fundamental limitations of CMOS scaling, because of high electron and hole mobility and compatibility with Si CMOS standard processing. In this paper, we present a new device structure including strained-Si channel, strained-SOI MOSFET, applicable to CMOS under sub-100 nm technology nodes. The main feature of this device is that thin strained-Si channel/relaxed SiGe hetero-structures are formed on buried oxides. The principle and the advantages are described in detail. The strained-SOI MOSFETs, whose electron and hole mobility is 1.6 and 1.3 times, respectively, higher than in conventional MOSFETs, have successfully been fabricated by combining the SIMOX technology with re-growth of strained Si films. We also present novel fabrication techniques to realize ultra-thin SiGe-on-Insulator (SGOI) virtual substrates with high Ge content, including Ge condensation due to oxidation of SGOI with lower Ge content. Strained-Si/SGOI structures with total thickness of 21 nm and Ge content of 56 % have been fabricated by oxidizing SiGe films on conventional SOI substrates and re-growing strained-Si films.

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1. Ohba, R. and Mizuno, T., IEEE Trans. Electron Devices 48, 338 (2001)
2. Pinto, M. R, Sangiorgi, E. and Bude, J., IEEE Electron Device Lett. 14, 375 (1993)
3. Lundstrom, M. S., IEEE Electron Device Lett. 22, 293 (2001)
4. Welser, J. J., Hoyt, J. L. and Gibbons, J. F., IEDM Tech. Dig., 1000 (1992)
5. Welser, J. J., Hoyt, J. L. and Gibbons, J. F., IEEE Electron Device Lett. 15, 100 (1994)
6. Welser, J. J., Hoyt, J. L., Takagi, S. and Gibbons, J. F., IEDM Tech. Dig., 373 (1994)
7. Rim, K., Hoyt, J. L. and Gibbons, J. F., IEDM Tech. Dig., 707 (1998)
8. Sugii, N., Nakagawa, K., Yamaguchi, S. and Miyao, M., Appl. Phys. Lett. 75, 2948 (1999)
9. Rim, K., Koester, S., Hargrove, M., Chu, J., Mooney, P.M., Ott, J., Kanarsky, T., Ronsheim, P., leong, M., Grill, A., Wong, H.-S.P., Proc. VLSI Symp., 59 (2001)
10. Rim, K., Welser, J.J., Hoyt, J.L. and Gibbons, J.F., IEDM Tech. Dig., 517 (1995)
11. Nayak, D. K., Goto, K., Yutani, A., Murota, J. and Shiraki, Y., IEEE Trans. Electron Devices 43, 1709 (1996)
12. Maiti, C.K., Bera, L.K. Dey, S.S., Nayak, D.K. and Chakrabarti, N.B., Solid State Electron. 41, 1863 (1997)
13. Tezuka, T., Kurobe, A., Sugiyama, N. and Takagi, S., Thin Solid Films 369, 340 (2000)
14. Tezuka, T., Sugiyama, N., Takagi, S. and Kurobe, A., Abs. 25th International Conference on the Physics of Semiconductors, H–270, 629 (2000)
15. Mizuno, T., Takagi, S., Sugiyama, N., Koga, J., Tezuka, T., Usuda, K., Hatakeyama, T., Kurobe, A. and Torium, A., IEDM Tech. Dig., 934 (1999)
16. Mizuno, T., Takagi, S., Sugiyama, N., Satake, H., Kurobe, A., and Toriumi, A., IEEE Electron Device Lett. 21, 230 (2000)
17. Mizuno, T., Sugiyama, N., Satake, H. and Takagi, S., Proc. VLSI Symposium, 210 (2000)
18. Takagi, S., Int. J. High Speed Electronics and Systems 10, 155 (2000)
19. Mizuno, T., Sugiyama, N., Kurobe, A., and Takagi, S., IEEE Trans. Electron Devices 48, 1612 (2001)
20. Rashed, M., Shih, W. K., Jallepalli, S., Kwan, T. J. T. and Maziar, C. M., IEDM Tech. Dig., 765 (1995)
21. Takagi, S., Hoyt, J.L., Welser, J.J., Gibbons, J.F., J. Appl. Phys. 80, 1567 (1996)
22. Oberhuber, R., Zandler, G. and Vogl, P., Phys. Rev. B 58, 9941 (1998)
23. Huang, L.-J., Chu, J.O., Goma, S., D'Emic, C.P., Koester, S.I., Canaperi, D.F., Mooney, P.M., Cordes, S.A., Speidell, J.L., Anderson, R.M., Wong, H.-S.P., Proc. VLSI Symp., 57 (2001)
24. Takagi, S., Mizuno, T., Sugiyama, N., Tezuka, T. and Kurobe, A., IEICE Trans. Electron. E84–C, 1043 (2001)
25. Cassan, E., J. Appl. Phys. 87, 7931 (2000)
26. Yoshimi, M., Terauchi, M., Nishiyama, A., Arisumi, O., Murakoshi, A., Matsuzawa, K., Sigyo, N., Takeno, S., Tomita, M., Suzuki, K., Ushiku, Y., Tango, H.; IEEE Trans. on Electron Devices 44, 423 (1997)
27. Hatakeyama, T., Matsuzawa, K. and Takagi, S., Jpn. J. Appl. Phys. 40, 2627 (2001)
28. Tezuka, T., Sugiyama, N. Mizuno, T. and Takagi, S., IEDM Tech. Dig., 946 (2001)
29. Fukatsu, S., Ishikawa, Y. Saito, T. and N, Shibata, Appl. Phys. Lett. 72, 3485 (1998)
30. Ishikawa, Y., Shibata, N. and Fukatsu, S., Appl. Phys. Lett. 75, 983 (1999)
31. Sugiyama, N., Mizuno, T., Takagi, S., Koike, M. and Kurobe, A., Thin Solid Films 369, 199 (2000)
32. Sugiyama, N., Mizuno, T., Suzuki, M. and Takagi, S., Jpn. J. Appl. Phys. 40, 2875 (2001)
33. Takagi, S., Toriumi, A., Iwase, M. and Tango, H., IEEE Trans. Electron Devices 41, 2357 (1994)
34. Mizuno, T., Sugiyama, N., Kurobe, A., and Takagi, S., IEICE Trans. Electron. E84–C, 1423 (2001)
35. Mizuno, T., Sugiyama, N., Tezuka, T., and Takagi, S., IEEE Trans. Electron Devices 49, no.1 (2002)
36. Tezuka, T., Sugiyama, N., Mizuno, T., Suzuki, M. and Takagi, S., Jpn. J. Appl. Phys. 40, 2866 (2001)
37. Tezuka, T., Sugiyama, N. and Takagi, S., Appl. Phys. Lett. 79, 1798 (2001)
38. Mizuno, T., Sugiyama, N., Tezuka, T. and Takagi, S., Ext. Abs. Solid State Devices and Materials, (2001); published in Appl. Phys. Lett.
39. LeGoues, F. K., Rosenberg, R. and Meyerson, B. S., Appl. Phys. Lett. 54, 644 (1989)

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