Hostname: page-component-77c89778f8-gvh9x Total loading time: 0 Render date: 2024-07-19T01:01:11.906Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural Studies of Nucleation and the Initial Stages of Growth of Epitaxial Gaas on Si(100) Substrates

Published online by Cambridge University Press:  26 February 2011

R. Hull ,
A. Fischer-Colbrie ,
S.J. Rosner ,
S.M. Koch  and
J.S. Harris
R. Hull
Affiliation:
Hewlett Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304
A. Fischer-Colbrie
Affiliation:
Hewlett Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304
S.J. Rosner
Affiliation:
Hewlett Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304 Electrical Engineering Department, Stanford University, Stanford, CA 94305
S.M. Koch
Affiliation:
Electrical Engineering Department, Stanford University, Stanford, CA 94305
J.S. Harris
Affiliation:
Electrical Engineering Department, Stanford University, Stanford, CA 94305
Get access

Abstract

Nucleation and growth of GaAs fIlms deposited by Molecular Beam Epitaxy upon Si(l00) substrates are studied by transmission electron microscopy. The initial nucleation of GaAs consists of approximately hemispherical islands associated with steps upon the substratesurface and coherently strained to the substrate lattice. As the island size increases, crystalline defects relax the strain between epilayer and substrate. Island coalescence is a secondary defect generation mechanism. Subsequent growth of the epitaxial GaAs layer reveals a progressive deterioration of the GaAs/Si interface planarity and the growth and eventual dissolution of amorphous or misoriented crystalline regions at the GaAs/Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 355
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Ishizaka, A., Nakagawa, K. and Shiraki, Y., in Proceedings of the 2nd International Symposium on Molecular Beam Epitaxy and Related Clean Surfaces Techniques (Japan Society of Applied Physics, Tokyo, 1983).Google Scholar
[2] Koch, S.M., Rosner, S.J., Schlom, Darrell and Harris, J.S. Jr., Proc. Mat. Res. Soc. 63, edited by Fan, J.C.C. and Poate, J.M. (Materials Research Society, Pittsburgh, PA, 1986), p. 37 Google Scholar
[3] Gibson, J.M., Phys. Rev. Lett., 53, 1859 (1984)Google Scholar
[4] People, R. and Bean, J.C., Appl. Phys. Lett. 47, 245 (1985)Google Scholar
[5] Hull, R. and Fischer-Colbrie, A., submitted to Applied Physics LettersGoogle Scholar
[6] Luryi, S. and Suhir, E., Appl. Phys. Lett. 49, 140 (1986)Google Scholar
[7] Rosner, S.J., Koch, S.M. and Harris, J.S., to be published in Applied Physics Letters, 49, (29 Dec, 1986)Google Scholar
[8] Hull, R., Rosner, S.J., Koch, S. and Harris, J.S. Jr., to be published in Appl. Phys. Lett. 49, (22 Dec. 1986)Google Scholar
[9] Biegelsen, D.K., Ponce, F.A., Smith, A.J. and Tramontana, J.C., submitted to Journ. Appl. Phys.Google Scholar
[10] Kaplan, R., Surf. Sci. 93, 145 (1980)Google Scholar
[11] Sakamoto, T. and Hashiguchi, G., Jap. Journ. Appl. Phys., 25, L78 (1986)CrossRefGoogle Scholar
[12] Turner, J.E., private communication.Google Scholar