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Structural Relaxation and De-Relaxation Phenomena in Amorphous Ge Films upon Irradiation with Short and Ultrashort Laser Pulses

Published online by Cambridge University Press:  15 February 2011

J. Solis ,
J. Siegel  and
C.N. Afonso
J. Solis
Affiliation:
Instituto de Optica, CSIC, C/Serrano 121, 28006-Madrid (SPAIN), Tel: +34-1-5616800, Fax: +34-1-5645557, e-mail:, iodjs37@pinarl.csic.es
J. Siegel
Affiliation:
Instituto de Optica, CSIC, C/Serrano 121, 28006-Madrid (SPAIN), Tel: +34-1-5616800, Fax: +34-1-5645557, e-mail:, iodjs37@pinarl.csic.es
C.N. Afonso
Affiliation:
Instituto de Optica, CSIC, C/Serrano 121, 28006-Madrid (SPAIN), Tel: +34-1-5616800, Fax: +34-1-5645557, e-mail:, iodjs37@pinarl.csic.es
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Abstract

The state of relaxation of amorphous Ge films has been modified upon melting and rapid solification induced by irradiation with ps laser pulses. The material obtained upon irradiation with fluences sligthly above the melting threshold is less relaxed than the as-deposited one (de-relaxation process). For larger fluences the results obtained suggest that the degree of relaxation is related to the supercooling achieved prior solidification.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 441
Copyright
Copyright © Materials Research Society 1996

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References

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