Skip to main content Accessibility help
×
Home

Structural Quality And Electrical Behavior Of Epitaxial High-κ Y2O3 / Si(001)

  • G. Vellianitis (a1), G. Apostolopoulos (a1), A. Dimoulas (a1), K. Argyropoulos (a1), B. Mereu (a2), R. Scholz (a2), M. Alexe (a2) and J. C. Hooker (a3)...

Abstract

Y2O3 thin films were grown directly on Si (001) by MBE and annealed in-situ under UHV at various annealing temperatures. The samples were investigated in-situ by RHEED and ex-situ by HRTEM. A 7 to 15 Å thick non-uniform interfacial amorphous layer is observed in the as-grown sample. After annealing at 490°C under UHV for 30 minutes the amorphous layer is reduced and a sharp Y2O3/Si interface is obtained. At higher annealing temperatures, YSi2 islands start to form at the Y2O3/Si interface. I-V measurements performed on generic MIS structures show that the annealed samples exhibit higher leakage current density than the as-grown sample, due to reduction of the wide band gap interfacial layer. Leakage current densities in annealed samples remain below 1A/cm2, which is acceptable for future high-κ transistor fabrication.

Copyright

References

Hide All
1. International Technology Roadmap for Semiconductors, 2001 edition,
2. Wilk, G.W., Wallace, R.M., Anthony, J.M., J. Appl. Phys. 90, 5243 (2001)
3. Niu, D., Ashcraft, R.W., Chen, Z., Stemmer, S., Parsons, G.N., Appl. Phys. Lett. 81, 676 (2002)
4. Niu, D., Ashcraft, R.W., Parsons, G.N., Appl. Phys. Lett. 80, 3575 (2002)
5. Stemmer, S., Klenov, D.O., Chen, Z., Niu, D., Ashcraft, R. W., Parsons, G. N., Appl. Phys. Lett. 81, 712 (2002).
6. Dimoulas, A., Travlos, A., Vellianitis, G., Boukos, N. and Argyropoulos, K., J. Appl. Phys. 90, 4224 (2001)
7. Dimoulas, A., Vellianitis, G., Travlos, A., Ioannou-Sougleridis, V., Nassiopoulou, A. G., J. Appl. Phys. 92, 426 (2002).
8. Apostolopoulos, G., Vellianitis, G., Dimoulas, A., Alexe, M. and Scholz, R., Fanciulli, M., Dekadjevi, D. T., Wiemer, C., Appl. Phys. Lett., 81, 19 (2002)
9. Shutthanandan, V., Thevuthasan, S., Liang, Y., Adams, E. M., Yu, Z., Droopad, R., Appl. Phys. Lett., 80, 10, 1803 (2002)
10. Ramdani, J., Droopad, R., Yu, Z., Curless, J.A., Overgaard, C.D., Finder, J., Eisenbeiser, K., Hallmark, J.A., Ooms, W.J., Kaushik, V., Alluri, P., Pietambaram, S., Appl. Surf. Sci., 159–160 (2000) 127133
11. Travlos, A., Boukos, N., Vellianitis, G., Apostolopoulos, G., Dimoulas, A., unpublished
12. Hubbard land, K.J., Schlom, D.G., J. Mater. Research 11, 2757 (1996)
13. Ioannou-Sougleridis, V., Vellianitis, G., Dimoulas, A., accepted, J. Appl. Phys. (2003).
14. Yu, Z., Ramdani, J., Curless, J.A., Overgaard, C.D., Droopad, J.M., Finder, J.M., Droopad, R., Eisenbeiser, K.W., Hallmark, J.A., Ooms, W.J., Kaushik, V.S., J. Vac. Sci. Technol. B 18, 2139 (2000)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed