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Structural Properties of Polycrystalline Silicon Films Formed by Pulsed Rapid Thermal Processing

  • Yongqian Wang (a1), Xianbo Liao (a1), Hongwei Diao (a1), Jie He (a1), Zhixun Ma (a1), Guozhen Yue (a1), Shuran Sheng (a1), Guanglin Kong (a1), Yuwen Zhao (a2), Zhongming Li (a2) and Feng Yun (a2)...

Abstract

A novel pulsed rapid thermal processing (PRTP) method has been used for realizing the solid-phase crystallization of amorphous silicon films prepared by PECVD. The microstructure and surface morphology of the crystallized films are investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results indicate that this PRTP is a suitable postcrystallization technique for fabricating large-area polycrystalline silicon films with good structural qualities such as large grain size, small lattice microstain and smooth surface morphology on low-cost substrate.

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